Room-temperature (RT) photoconductor using mid-wave infrared (MWIR) nanostructured lead selenide (PbSe)/cadmium selenide (CdSe) is presented on a commercially available silicon dioxide on silicon (100) (SiO2/Si) wafer. This device is fabricated through vapor phase deposition (VPD) and subsequently annealed in oxygen to create interconnected nanostructures, which establish efficient pathways for photogenerated carriers and passivate defects within the material. RT specific detectivity (D*) of 8.57 × 108 Jones and a peak D* of 2.49 × 109 Jones are achieved with interband cut-off wavelength of 4 μm. Additionally, the utilization of nanostructured thin film deposition on cost-effective SiO2/Si(100) substrates via the affordable VPD method significantly reduces production costs and facilitates the potential of monolithic integration with Si-based readout integrated circuitry enabling low-cost large-scale production.
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January 2024
Research Article|
January 12 2024
Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects
Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
Milad Rastkar Mirzaei
;
Milad Rastkar Mirzaei
a)
(Conceptualization, Data curation, Investigation, Methodology, Software, Visualization, Writing – original draft, Writing – review & editing)
The School of Electrical and Computer Engineering, University of Oklahoma
, Norman, Oklahoma 73019, USA
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Zhisheng Shi
Zhisheng Shi
a)
(Conceptualization, Funding acquisition, Methodology, Project administration, Supervision, Validation, Writing – original draft, Writing – review & editing)
The School of Electrical and Computer Engineering, University of Oklahoma
, Norman, Oklahoma 73019, USA
Search for other works by this author on:
Milad Rastkar Mirzaei
a)
Zhisheng Shi
a)
The School of Electrical and Computer Engineering, University of Oklahoma
, Norman, Oklahoma 73019, USA
J. Vac. Sci. Technol. B 42, 012204 (2024)
Article history
Received:
October 03 2023
Accepted:
December 19 2023
Citation
Milad Rastkar Mirzaei, Zhisheng Shi; Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects. J. Vac. Sci. Technol. B 1 January 2024; 42 (1): 012204. https://doi.org/10.1116/6.0003193
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