With the rise of two-dimensional (2D) materials and nanoelectronics, compatible processes based on existing Si technologies are highly demanded to enable new and superior device functions. In this study, we utilized an O2 plasma treatment as a compatible and tunable method for anionic substitution doping in 2D WSe2. With an introduced WOx layer, moderate or even degenerate doping was realized to enhance hole transport in WSe2. By combining with 2D MoS2, an evolution of the 2D heterogeneous junction, in terms of the energy band structure and charge transport, was comprehensively investigated as a function of applied electric fields. The heterogeneous WSe2/MoS2 junction can function as an antiambipolar transistor and exhibit exceptional and well-balanced performance, including a superior peak-valley ratio of 2.4 × 105 and a high current density of 55 nA/μm. This work highlights the immense potential of 2D materials and their engineering to seamlessly integrate with existing semiconductor technology and enhance the efficiency of future nanoelectronics.
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Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors
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September 2023
Research Article|
August 22 2023
Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors
Simran Shahi
;
Simran Shahi
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Asma Ahmed
;
Asma Ahmed
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Ruizhe Yang
;
Ruizhe Yang
(Investigation)
2
Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Anthony Cabanillas;
Anthony Cabanillas
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Anindita Chakravarty;
Anindita Chakravarty
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Maomao Liu;
Maomao Liu
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Hemendra Nath Jaiswal;
Hemendra Nath Jaiswal
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Yu Fu;
Yu Fu
(Investigation)
3
Department of Materials Design and Innovation, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Yutong Guo;
Yutong Guo
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Satyajeetsinh Shaileshsin Jadeja;
Satyajeetsinh Shaileshsin Jadeja
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Hariharan Murugesan;
Hariharan Murugesan
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Anthony Butler;
Anthony Butler
(Investigation)
3
Department of Materials Design and Innovation, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Chu Te Chen
;
Chu Te Chen
(Investigation)
3
Department of Materials Design and Innovation, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Joel Muhigirwa;
Joel Muhigirwa
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Mohamed Enaitalla;
Mohamed Enaitalla
(Investigation)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Jun Liu
;
Jun Liu
a)
(Supervision)
2
Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Fei Yao
;
Fei Yao
b)
(Supervision)
3
Department of Materials Design and Innovation, University at Buffalo, The State University of New York
, Buffalo, New York 14260
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Huamin Li
Huamin Li
c)
(Conceptualization, Writing – original draft, Writing – review & editing)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260c)Author to whom correspondence should be addressed: huaminli@buffalo.edu
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c)Author to whom correspondence should be addressed: huaminli@buffalo.edu
a)
Electronic mail: jliu238@buffalo.edu
b)
Electronic mail: feiyao@buffalo.edu
J. Vac. Sci. Technol. B 41, 053202 (2023)
Article history
Received:
June 14 2023
Accepted:
August 01 2023
Citation
Simran Shahi, Asma Ahmed, Ruizhe Yang, Anthony Cabanillas, Anindita Chakravarty, Maomao Liu, Hemendra Nath Jaiswal, Yu Fu, Yutong Guo, Satyajeetsinh Shaileshsin Jadeja, Hariharan Murugesan, Anthony Butler, Chu Te Chen, Joel Muhigirwa, Mohamed Enaitalla, Jun Liu, Fei Yao, Huamin Li; Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors. J. Vac. Sci. Technol. B 1 September 2023; 41 (5): 053202. https://doi.org/10.1116/6.0002888
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