Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

With the rise of two-dimensional (2D) materials and nanoelectronics, compatible processes based on existing Si technologies are highly demanded to enable new and superior device functions. In this study, we utilized an O₂ plasma treatment as a compatible and tunable method for anionic substitution doping in 2D WSe₂. With an introduced WO_x layer, moderate or even degenerate doping was realized to enhance hole transport in WSe₂. By combining with 2D MoS₂, an evolution of the 2D heterogeneous junction, in terms of the energy band structure and charge transport, was comprehensively investigated as a function of applied electric fields. The heterogeneous WSe₂/MoS₂ junction can function as an antiambipolar transistor and exhibit exceptional and well-balanced performance, including a superior peak-valley ratio of 2.4 × 10⁵ and a high current density of 55 nA/μm. This work highlights the immense potential of 2D materials and their engineering to seamlessly integrate with existing semiconductor technology and enhance the efficiency of future nanoelectronics.