In this work, we study the thermal evolution of the optical and electrical features of an InN thin film. By correlating photoluminescence (PL) and Hall effect results, we determine the appropriate values of the correlation parameter to be used in the empirical power law that associates the electron concentration with the linewidth of the PL spectrum, in the scope of the Burstein–Moss effect across a wide range of temperatures. Additionally, by associating Raman and PL results, we observe the thermally induced compressive strain widening of the bandgap of the InN film. Our findings demonstrate the reliability of optical methods in providing contactless measurements of electrical and structural features of semiconductors.

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