In this paper, the problem of depth profiling analysis of nanoscale heterostructures containing doped delta layers and quantum wells using the SIMS method is considered. Based on computer simulation data and previously obtained experimental data, we demonstrated that the RMR model most accurately and completely describes the redistribution of the analyzed element in ultrathin layers that occurs during ion sputtering. A comparative analysis of the surface roughness–ion mixing–recoil implantation (RMR) model with MRI (mixing-roughness-information depth) and UDS (up-and-down slope) models proposed by Hoffman and Dowsett, respectively, was performed. It was shown that the introduction into the MRI model of a parameter describing some layer of constant thickness, in which the components of the analyzed layer and matrix elements are uniformly mixed, is not quite justified. It is concluded that during depth profiling of a monoatomic layer, the center of mass of this layer shifts away from the surface, as predicted by the RMR model, rather than toward the surface, as predicted by the MRI model. It is found that preferential sputtering does not affect the experimental depth distribution of elements obtained by the SIMS method.

1.
B.
Schmidt
and
K.
Wetzig
,
Ion Beams in Materials Processing and Analysis
(Springer Vienna, Wien,
2013
).
2.
H.
Bernas
,
Materials Science with Ion Beams, in Topics in Applied Physics
(Springer-Verlag Berlin, Heidelberg, 2010).
3.
S.
Hofmann
,
Rep. Prog. Phys.
61
,
827
(
1998
).
4.
S.
Hofmann
,
J. Vac. Sci. Technol. B
10
,
316
(
1992
).
5.
S.
Hofmann
,
Surf. Interface Anal.
21
,
673
(
1994
).
7.
M. G.
Dowsett
and
R. D.
Barlow
,
Anal. Chim. Acta
297
,
253
(
1994
).
8.
M. G.
Dowsett
and
D. P.
Chu
,
J. Vac. Sci. Technol. B
16
,
377
(
1998
).
9.
ISO 20341
,
Surface Chemical Analysis—Secondary-ion Mass Spectrometry—Method for Estimating Depth Resolution Parameters with Multiple Delta-Layer Reference Materials
(
ISO
,
Geneva
,
2003
).
10.
Y. A.
Kudriavtsev
,
J. Surf. Investig. X-ray Synchrotron Neutron Techn.
14
,
92
(
2020
).
11.
S.
Gallardo
,
Yu.
Kudriavtsev
,
A.
Villegas
,
A.
Godines
,
R.
Asomoza
, in
Proceedings of the 3rd International Conference on Electrical and Electronic Engineering ICEEE-2006
, Veracruz, Mexico, 6–8 September 2006 (IEEE, Piscataway, NJ,
Veracruz
,
2006
), p.
377
.
12.
Yu.
Kudriavtsev
,
S.
Gallardo
,
A.
Villegas
,
G.
Ramirez
, and
R.
Asomoza
,
Bull. Russ. Acad. Sci. Phys.
72
,
895
(
2008
).
13.
H. H.
Andersen
,
Appl. Phys.
18
,
131
(
1979
).
14.
See http://www.srim.org for information about the program.
15.
K. D.
Moiseev
,
V. N.
Nevedomsky
,
Y.
Kudriavtsev
,
A.
Escobosa-Echavarria
, and
M.
Lopez-Lopez
,
Semiconductors
51
,
1141
(
2017
).
16.
S.
Hofmann
,
S. Y.
Lian
,
Y. S.
Han
,
Q. R.
Deng
, and
J. Y.
Wang
,
Thin Solid Films
662
,
165
(
2018
).
17.
Z. L.
Liau
,
B. Y.
Tsaur
, and
J. W.
Mauer
,
J. Vac. Sci. Technol.
16
,
121
(
1979
).
18.
P.
Sigmund
, in
Sputtering by Particle Bombardment I
, edited by
R.
Behrisch
(Springer-Verlag Berlin, Heidelberg, 1981), pp.
9
72
.
19.
S.
Dhar
,
M.
Milosavljevic
,
N.
Bibic
, and
K. P.
Lieb
,
Phys. Rev. B
65
,
024109
(
2001
).
20.
D. K.
Sarkar
,
S.
Dhara
,
K. G. M.
Nair
, and
S.
Chaudhury
,
Nucl. Instrum. Meth. Phys. Res. Sect. B
161–163
,
992
(
2000
).
21.
D. K.
Sarkar
,
S.
Dhara
,
A.
Gupta
,
K. G. M.
Nair
, and
S.
Chaudhury
,
Nucl. Instrum. Meth. Phys. Res. Sect. B
168
,
21
(
2000
).
22.
N.
Bibic
,
S.
Dhar
,
M.
Milosavljevic
,
K.
Removic
,
L.
Rissanen
, and
K. P.
Lieb
,
Nucl. Instrum. Meth. Phys. Res. Sect. B
161–163
,
1011
(
2000
).
23.
S. Y.
Lian
,
K. J.
Kim
,
T. G.
Kim
,
S.
Hofmann
, and
J. Y.
Wang
,
Appl. Surf. Sci.
481
,
1103
(
2019
).
24.
Y.
Kudriavtsev
,
A.
Hernandez
,
R.
Asomoza
,
S.
Gallardo
,
M.
Lopez
, and
K.
Moiseev
,
Surf. Interface Anal.
49
,
145
(
2017
).
25.
G.
Betz
and
G. K.
Wehner
, “
Sputtering of multicomponent materials, in ‘Sputtering by particle bombardment II,’
” in
Topics in Applied Physics, Vol. 52
, edited by
Behrich
(Springer-Verlag Berlin, Heidelberg, 1983), pp.
11
90
.
26.
M.
Pohl
and
W.-G.
Burchard
,
Scanning
3
,
251
(
1980
).
27.
S. W.
MacLaren
,
J. E.
Baker
,
N. L.
Finnegan
, and
C. M.
Loxton
,
J. Vac. Sci. Technol. A
10
,
468
(
1992
).
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