Design, fabrication, and characterization of close-packed field emitter tips enclosed in an Si trench and stand-alone arrays are presented. The two types of field emitter arrays (FEAs) are fabricated using a combination of high-throughput electron-beam lithography, plasma etching, and anode bonding integration technology. The field emitter array inside the trench shows a higher turn-on voltage compared to the stand-alone array. Without any tip sharpening, a current of 7.5 A was observed at 300 V from FEAs inside the trench, while a higher current of 12.5 A was observed at the same voltage for the stand-alone array.
Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography
Note: This paper is a part of the 2023 Special Topic Collection on Vacuum Nanoelectronics.
S. Ghotbi, S. Mohammadi; Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography. J. Vac. Sci. Technol. B 1 January 2023; 41 (1): 013202. https://doi.org/10.1116/6.0002295
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