We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb-blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state and sustain within the blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.
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January 2023
Research Article|
January 11 2023
Inelastic cotunneling in the Coulomb-blockade transport of donor-atom transistors
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Pooja Yadav;
Pooja Yadav
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Resources, Software, Validation, Visualization, Writing – original draft)
1
Department of Physics, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
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Soumya Chakraborty;
Soumya Chakraborty
(Conceptualization, Investigation, Methodology, Software, Validation, Visualization, Writing – review & editing)
1
Department of Physics, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
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Daniel Moraru
;
Daniel Moraru
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Supervision, Validation, Visualization, Writing – review & editing)
2
Research Institute of Electronics, Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Arup Samanta
Arup Samanta
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – review & editing)
1
Department of Physics, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
3
Centre of Nanotechnology, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
a)Author to whom correspondence should be addressed: [email protected]
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Pooja Yadav
1
Soumya Chakraborty
1
Daniel Moraru
2
Arup Samanta
1,3,a)
1
Department of Physics, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
2
Research Institute of Electronics, Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
3
Centre of Nanotechnology, Indian Institute of Technology Roorkee
, Roorkee 247667, Uttarakhand, India
a)Author to whom correspondence should be addressed: [email protected]
J. Vac. Sci. Technol. B 41, 012208 (2023)
Article history
Received:
December 03 2022
Accepted:
December 12 2022
Citation
Pooja Yadav, Soumya Chakraborty, Daniel Moraru, Arup Samanta; Inelastic cotunneling in the Coulomb-blockade transport of donor-atom transistors. J. Vac. Sci. Technol. B 1 January 2023; 41 (1): 012208. https://doi.org/10.1116/5.0097509
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