We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb-blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state and sustain within the blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.

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See the supplementary material at https://www.scitation.org/doi/suppl/10.1116/5.0097509 for the description of donor location in Fig. S1(a) and schematic of the donor potential Fig. S2(b), for the analysis of sub-peaks for the excited states of donors and LDOS of leads in Figs. S2–S5, for the energy levels assignments in Figs. S3 and S5, and for the detailed theoretical formalism of resonantlike inelastic cotunneling.

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