The stabilization of the threshold switching characteristics of memristive is examined as a function of sample growth and device characteristics. Sub-stoichiometric was deposited via magnetron sputtering and patterned in nanoscale (–) W/Ir//TiN devices and microscale (–) crossbar Au/Ru//Pt devices. Annealing the nanoscale devices at 700 C removed the need for electroforming the devices. The smallest nanoscale devices showed a large asymmetry in the IV curves for positive and negative bias that switched to symmetric behavior for the larger and microscale devices. Electroforming the microscale crossbar devices created conducting filaments with symmetric IV curves whose behavior did not change as the device area increased. The smallest devices showed the largest threshold voltages and most stable threshold switching. As the nanoscale device area increased, the resistance of the devices scaled with the area as , indicating a crystallized bulk device. When the nanoscale device size was comparable to the size of the filaments, the annealed nanoscale devices showed similar electrical responses as the electroformed microscale crossbar devices, indicating filament-like behavior in even annealed devices without electroforming. Finally, the addition of up to 1.8% Ti dopant into the films did not improve or stabilize the threshold switching in the microscale crossbar devices.
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December 2022
Research Article|
November 14 2022
Threshold switching stabilization of NbO2 films via nanoscale devices
Special Collection:
Neuromorphic Materials, Devices, and Processing
M. C. Sullivan
;
M. C. Sullivan
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Physics and Astronomy, Ithaca College
, Ithaca, New York 14850a)Author to whom correspondence should be addressed: [email protected]
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Zachary R. Robinson
;
Zachary R. Robinson
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Supervision, Validation, Writing – review & editing)
2
Department of Physics, SUNY Brockport
, Brockport, New York 14420
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Karsten Beckmann
;
Karsten Beckmann
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Validation, Writing – review & editing)
3
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 135024
NY CREATES
, Albany, New York 13502
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Alex Powell;
Alex Powell
(Investigation)
1
Department of Physics and Astronomy, Ithaca College
, Ithaca, New York 14850
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Ted Mburu;
Ted Mburu
(Data curation, Visualization)
1
Department of Physics and Astronomy, Ithaca College
, Ithaca, New York 14850
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Katherine Pittman;
Katherine Pittman
(Investigation)
2
Department of Physics, SUNY Brockport
, Brockport, New York 14420
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Nathaniel Cady
Nathaniel Cady
(Funding acquisition)
3
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 13502
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M. C. Sullivan
1,a)
Zachary R. Robinson
2
Karsten Beckmann
3,4
Alex Powell
1
Ted Mburu
1
Katherine Pittman
2
Nathaniel Cady
3
1
Department of Physics and Astronomy, Ithaca College
, Ithaca, New York 14850
2
Department of Physics, SUNY Brockport
, Brockport, New York 14420
3
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 13502
4
NY CREATES
, Albany, New York 13502
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is a part of the Special Topic Collection on Neuromorphic Materials, Devices, and Processing.
J. Vac. Sci. Technol. B 40, 063202 (2022)
Article history
Received:
July 29 2022
Accepted:
October 24 2022
Citation
M. C. Sullivan, Zachary R. Robinson, Karsten Beckmann, Alex Powell, Ted Mburu, Katherine Pittman, Nathaniel Cady; Threshold switching stabilization of NbO2 films via nanoscale devices. J. Vac. Sci. Technol. B 1 December 2022; 40 (6): 063202. https://doi.org/10.1116/6.0002129
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