The dependence of the electron emission current density on the excitation power density of a Cs/O-activated negative electron affinity (NEA) InGaN photocathode was investigated. The emission current density of the NEA-InGaN photocathode increased monotonically with the excitation power density in the measured range. The emission current density reached 5.6 × 103 A/cm2 at an excitation power density of 2.6 × 106 W/cm2. Using the electron thermal energy estimated by comparing simulation and experimental results [D. Sato, H. Shikano, A. Koizumi, T. Nishitani, Y. Honda, and H. Amano, J. Vac. Sci. Technol. B 39, 062209 (2021)], the reduced brightness of 4 × 108 A/m2 sr V was derived.
REFERENCES
1.
M. S.
Bronsgeest
, J. E.
Barth
, L. W.
Swanson
, and P.
Kruit
, J. Vac. Sci. Technol. B
26
, 949
(2008
). 2.
W. E.
Spicer
, Appl. Phys.
12
, 115
(1977
). 3.
W. E.
Spicer
, Phys. Rev.
112
, 114
(1958
). 4.
T.
Nishitani
, Y.
Arakawa
, S.
Noda
, A.
Koizumi
, D.
Sato
, H.
Shikano
, H.
Iijima
, H.
Amano
, and Y.
Honda
, “Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes,” J. Vac. Sci Technol. B
(submitted).5.
J.
Grames
, R.
Suleiman
, P. A.
Adderley
, J.
Clark
, J.
Hansknecht
, D.
Machie
, M.
Poelker
, and M. L.
Stutzman
, Phys. Rev. Accel. Beams
14
, 043501
(2011
). 6.
I. V.
Bazarov
, B. M.
Dunham
, Y.
Li
, X.
Liu
, D. G.
Ouzounov
, C. K.
Sinclair
, F.
Hannon
, and T.
Miyajima
, J. Appl. Phys.
103
, 054901
(2008
). 7.
K.
Aulenbacher
, J.
Schuler
, D. v.
Harrach
, E.
Reichert
, J.
Röthgen
, A.
Subashev
, V.
Tioukine
, and Y.
Yashin
, J. Appl. Phys.
92
, 7536
(2002
). 8.
H.
Morishita
, T.
Ohshima
, M.
Kuwahara
, Y.
Ose
, and T.
Agemura
, J. Appl. Phys.
127
, 164902
(2020
). 9.
H.
Morishita
, T.
Ohshima
, K.
Otsuga
, M.
Kuwahara
, T.
Agemura
, and Y.
Ose
, Ultramicroscopy
230
, 113386
(2021
). 10.
H.
Yasuda
, T.
Nishitani
, S.
Ichikawa
, S.
Hatanaka
, Y.
Honda
, and H.
Amano
, Quantum Beam Sci.
5
, 5
(2021
). 11.
T.
Nishitani
, T.
Maekawa
, M.
Tabuchi
, T.
Meguro
, Y.
Honda
, and H.
Amano
, Proc. SPIE
9363
, 93630T
(2015
). 12.
D.
Sato
, T.
Nishitani
, Y.
Honda
, and H.
Amano
, Jpn. J. Appl. Phys.
55
, 05FH05
(2016
). 13.
D.
Sato
, A.
Honda
, A.
Koizumi
, T.
Nishitani
, Y.
Honda
, and H.
Amano
, Microelectron. Eng.
223
, 111229
(2020
). 14.
N.
Takahashi
, S.
Tanaka
, M.
Ichikawa
, Y. Q.
Cai
, and M.
Kamada
, J. Phys. Soc. Jpn.
66
, 2798
(1997
). 15.
T.
Nishitani
, M.
Tabuchi
, K.
Motoki
, T.
Takashima
, A.
Era
, and Y.
Takeda
, J. Phys. Conf. Ser.
298
, 012010
(2011
). 16.
D.
Sato
, H.
Shikano
, A.
Koizumi
, T.
Nishitani
, Y.
Honda
, and H.
Amano
, J. Vac. Sci Technol. B
39
, 062209
(2021
). 17.
A.
Herrera-Gómez
, G.
Vergara
, and W. E.
Spicer
, J. Appl. Phys.
79
, 7318
(1996
). 18.
S. A.
Rozhkov
, V. V.
Bakin
, D. V.
Gorshkov
, S. N.
Kosolobov
, and H. E.
Scheibler
, J. Phys. Conf. Ser.
1199
, 012031
(2019
). 19.
B. I.
Reznikov
and A. V.
Subashiev
, Semiconductors
32
, 1006
(1998
). 20.
J. E.
Schneider
et al., J. Vac. Sci. Technol. B
16
, 3192
(1998
). 21.
A. H. V.
van Veen
, C. W.
Hagen
, J. E.
Barth
, and P.
Kruit
, J. Vac. Sci. Technol. B
19
, 2038
(2001
). © 2022 Author(s). Published under an exclusive license by the AVS.
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