Study of simulations of double graded InGaN solar cell structures Available to Purchase

The performances of various configurations of InGaN solar cells are compared using nextnano semiconductor simulation software. Here, we compare a flat base-graded wall GaN/InGaN structure, with an In_xGa_1−xN well with sharp GaN contact layers, and an In_xGa_1−xN structure with In_xGa_1−xN contact layers, i.e., a homojunction. The doping in the graded structures is the result of polarization doping at each edge (10 nm from each side) due to the compositional grading, while the well structures and homojunctions are impurities doped at each edge (10 nm from each side) at levels equal to the polarization doping density in the graded structure with similar maximum indium concentration. The solar cells are characterized by their open-circuit voltage, V_oc, short circuit current, I_sc, solar efficiency, η, and energy band diagram. The results indicate that an increase in I_sc and η results from increasing both the fixed and maximum indium compositions, while the V_oc decreases. The maximum efficiency is obtained for the InGaN well with 60% In.