Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

Hong, J. M.; Wang, S.; Flood, J. D.; Merz, J. L.; Sands, T.; Washburn, J.

doi:10.1116/1.583395

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Dissertation| March 01 1986

Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

J. M. Hong;

J. M. Hong

Electronic Research Laboratory, Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720

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S. Wang;

S. Wang

Electronic Research Laboratory, Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720

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J. D. Flood;

J. D. Flood

Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106

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J. L. Merz;

J. L. Merz

Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106

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T. Sands;

T. Sands

Department of Materials Science and Mineral Engineering and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

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J. Washburn

Department of Materials Science and Mineral Engineering and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

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J. Vac. Sci. Technol. B 4, 629–630 (1986)

https://doi.org/10.1116/1.583395

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Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

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