Development of in situ selected area doping techniques would add a powerful new dimension to GaAs MBE technology. We report here a study of an in situ selected area doping procedure based on the following steps: (i) MBE growth of GaAs on a clean GaAs (001) substrate, (ii) adsorption of an As passivation cap which would be patterned for selected area doping, (iii) adsorption of an organotin compound, (iv) thermal desorption of the organotin compound along with the As cap in the passivated areas and with pyrolytic decomposition of the organotin compound in the unpassivated regions, and (v) regrowth of GaAs with selected area Sn incorporation into the regrowth layer. In this study we evaluated steps (iii)–(v). Steps (iii) and (iv) were investigated by means of in situ Auger electron spectroscopy, and step (v) by electrolytic C–V profiling of the carrier concentration. The organotin compounds in this study were tetrabutyltin and dibutyltin dibromide.
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March 1986
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
March 01 1986
Arsenic passivation of GaAs and pyrolytic decomposition of organotin compounds for in situ selected area doping of GaAs molecular beam epitaxy
S. P. Kowalczyk;
S. P. Kowalczyk
Rockwell International Corporation, Microelectronics Research and Development Center, Thousand Oaks, California 91360
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D. L. Miller
D. L. Miller
Rockwell International Corporation, Microelectronics Research and Development Center, Thousand Oaks, California 91360
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J. Vac. Sci. Technol. B 4, 625–628 (1986)
Article history
Received:
August 15 1985
Accepted:
October 17 1985
Citation
S. P. Kowalczyk, D. L. Miller; Arsenic passivation of GaAs and pyrolytic decomposition of organotin compounds for in situ selected area doping of GaAs molecular beam epitaxy. J. Vac. Sci. Technol. B 1 March 1986; 4 (2): 625–628. https://doi.org/10.1116/1.583394
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