Development of insitu selected area doping techniques would add a powerful new dimension to GaAs MBE technology. We report here a study of an insitu selected area doping procedure based on the following steps: (i) MBE growth of GaAs on a clean GaAs (001) substrate, (ii) adsorption of an As passivation cap which would be patterned for selected area doping, (iii) adsorption of an organotin compound, (iv) thermal desorption of the organotin compound along with the As cap in the passivated areas and with pyrolytic decomposition of the organotin compound in the unpassivated regions, and (v) regrowth of GaAs with selected area Sn incorporation into the regrowth layer. In this study we evaluated steps (iii)–(v). Steps (iii) and (iv) were investigated by means of insitu Auger electron spectroscopy, and step (v) by electrolytic CV profiling of the carrier concentration. The organotin compounds in this study were tetrabutyltin and dibutyltin dibromide.

This content is only available via PDF.
You do not currently have access to this content.