Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal‐insulator‐semiconductor field‐effect transistors

Calculations are shown to investigate the possibility of modulating the channel conductance of InSb field‐effect transistors (FET’s) at 300 K. Molecular beam epitaxy (MBE) grown InSb metal‐insulator‐semiconductor field‐effect transistors (MISFET’s) were successfully fabricated and exhibited room temperature operation.