The growth of Cd1−xZnxTe on GaAs (100) is reported here for the first time. In contrast to CdTe, when x is higher than 0.15 only the Cd1−xZnxTe(100)∥GaAs(100) orientation is observed. We also present the growth and characterization of n‐type and p‐type layers of Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe for the first time, in most of the cases. These layers exhibit high structural and good electrical properties. Several different characterizations carried out on Hg1−xCdxTe layers grown by MBE on GaAs substrates show that this material is at least as good as the best material grown by any other technique and confirm that GaAs is emerging as the candidate for replacement of CdTe as the substrate for growth of Hg1−xCdxTe by MBE. Hg1−xMnxTe and mainly Hg1−xZnxTe, which have electrical characteristics similar to high quality Hg1−xCdxTe, appear as potential candidates for replacement of Hg1−xCdxTe.
Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)
J. P. Faurie, J. Reno, S. Sivananthan, I. K. Sou, X. Chu, M. Boukerche, P. S. Wijewarnasuriya; Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100). J. Vac. Sci. Technol. B 1 March 1986; 4 (2): 585–589. https://doi.org/10.1116/1.583381
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