An ion projection lithography machine uses ions as the information carrier in a demagnifying step‐and‐repeat exposure system. With an IPLM sub‐0.2‐micron resolution can be obtained combined with an extremely high depth of focus—more than 100 μm. The use of a reliable and stable duoplasmatron ion source with high brightness and high angular current density is significant for this machine. A preprojective lens octupole permits an electrostatic shift of the ion image in x and y directions, and a solenoid at this site enables a rotation of the ion image through the action of the axial magnetic field. Furthermore, the scale of the projected ion image can be adjusted electronically within ±3%. Thus fine adjustment for die‐by‐die alignment can be done without mechanical movements. An ion projection lithography machine IPLM‐01 with a total height of 2.5 m and a floor space of 2 m2 has been built. By inserting a mask consisting of a grid of pinholes an ion multibeam scanning tool (IMBS) is generated. Using demagnifying projection an IMBS enables the production of gratings with sub‐0.2‐μm periodicity and adjusted scale.
Skip Nav Destination
Article navigation
January 1986
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
January 01 1986
Ion projection lithography machine IPLM‐01: A new tool for sub‐0.5‐micron modification of materials
G. Stengl;
G. Stengl
IMS—Ion Microfabrication Systems Gesellschaft m.b.H., Schreygasse 3, A‐1020 Vienna, Austria
Search for other works by this author on:
H. Löschner;
H. Löschner
IMS—Ion Microfabrication Systems Gesellschaft m.b.H., Schreygasse 3, A‐1020 Vienna, Austria
Search for other works by this author on:
W. Maurer;
W. Maurer
IMS—Ion Microfabrication Systems Gesellschaft m.b.H., Schreygasse 3, A‐1020 Vienna, Austria
Search for other works by this author on:
P. Wolf
P. Wolf
IMS—Ion Microfabrication Systems Gesellschaft m.b.H., Schreygasse 3, A‐1020 Vienna, Austria
Search for other works by this author on:
J. Vac. Sci. Technol. B 4, 194–200 (1986)
Article history
Received:
July 01 1985
Accepted:
September 26 1985
Citation
G. Stengl, H. Löschner, W. Maurer, P. Wolf; Ion projection lithography machine IPLM‐01: A new tool for sub‐0.5‐micron modification of materials. J. Vac. Sci. Technol. B 1 January 1986; 4 (1): 194–200. https://doi.org/10.1116/1.583436
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Suppressing oxygen vacancy formation in ZrO2 to improve electrical properties by employing MoO2 bottom electrode
Jaehyeon Yun, Seungyeon Kim, et al.
Related Content
Experimental investigation of stochastic space charge effects on pattern resolution in ion projection lithography systems
J. Vac. Sci. Technol. B (November 1994)
A review of ion projection lithography
J. Vac. Sci. Technol. B (May 1998)
Ion projection lithography over wafer topography
J. Vac. Sci. Technol. B (November 1994)
Plasma source for ion and electron beam lithography
J. Vac. Sci. Technol. B (November 1998)
Ion projection sensitized selective Cu electroplating on uncoated p -Si
J. Vac. Sci. Technol. B (December 2002)