Cd-free ZnCuInS/ZnS quantum dot-based light-emitting diodes (QLEDs) were fabricated using metallic sputtered ZnO. The undoped and metallic ZnO film was prepared with substrate heating to enhance the electronics properties of the oxide layer. The semiconductor properties of the ZnO layer were examined by using Hall effect measurements. The structural and morphological properties were observed using x-ray diffraction analysis and field emission scanning electron microscopy. After fabricating the QLED devices, its performances were investigated under DC electrical measurement system and compared with the preparation conditions of the ZnO films. The power efficiency of 11.6 lm/W, current efficiency of 14.1 cd/A, and external quantum efficiency (EQE) of 7.5% were achieved, where the ZnO film was prepared at the substrate temperature of 150 °C, and the Hall mobility of 23.4 cm2/Vs, carrier density of 4.1 × 1020 cm−3 was observed accordingly.
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December 2021
Research Article|
November 04 2021
Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer
Mohammad Mostafizur Rahman Biswas
;
Mohammad Mostafizur Rahman Biswas
a)
1
Graduate School of Science and Engineering, University of Toyama
, Toyama 930-8555, Japan
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Md. Faruk Hossain;
Md. Faruk Hossain
b)
2
Department of Electrical & Electronics Engineering, Rajshahi University of Engineering and Technology
, Rajshahi 6100, Bangladesh
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Masahiro Morimoto;
Masahiro Morimoto
1
Graduate School of Science and Engineering, University of Toyama
, Toyama 930-8555, Japan
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Shigeki Naka;
Shigeki Naka
1
Graduate School of Science and Engineering, University of Toyama
, Toyama 930-8555, Japan
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Hiroyuki Okada
Hiroyuki Okada
c)
1
Graduate School of Science and Engineering, University of Toyama
, Toyama 930-8555, Japan
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a)
Electronic mail: engr.mfhossain@eee.ruet.ac.bd
b)
Electronic mail: engr.mfhossain@eee.ruet.ac.bd
c)
Electronic mail: engr.mfhossain@eee.ruet.ac.bd
J. Vac. Sci. Technol. B 39, 063401 (2021)
Article history
Received:
August 17 2021
Accepted:
October 13 2021
Citation
Mohammad Mostafizur Rahman Biswas, Md. Faruk Hossain, Masahiro Morimoto, Shigeki Naka, Hiroyuki Okada; Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer. J. Vac. Sci. Technol. B 1 December 2021; 39 (6): 063401. https://doi.org/10.1116/6.0001365
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