We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode voltage of 30 V at 500 °C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063 mA. We consider the N-polarity with spontaneous polarization to be the cause of the increase in electron density at the Cs/n-GaN interface. TE current was also detected from both samples with Ga- and N-polarity even when the applied anode voltage was 0 V or lower, indicating the presence of thermionic conversion characteristics. From the viewpoint of a thermionic converter, the electromotive force for TE was 0.12 V higher when using the N-polarity n-GaN cathode compared with the Ga-polarity cathode. The short-circuit currents at 500 °C were 4.8 and 0.97 μA for the sample with N-polarity and the one with Ga-polarity, respectively.
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January 2021
Research Article|
January 05 2021
Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes
Shigeya Kimura
;
Shigeya Kimura
a)
1
Corporate Research & Development Center, Toshiba Corporation
, 1, Komukai-toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa 212-8582, Japan
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Hisashi Yoshida;
Hisashi Yoshida
1
Corporate Research & Development Center, Toshiba Corporation
, 1, Komukai-toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa 212-8582, Japan
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Hisao Miyazaki;
Hisao Miyazaki
1
Corporate Research & Development Center, Toshiba Corporation
, 1, Komukai-toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa 212-8582, Japan
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Takuya Fujimoto;
Takuya Fujimoto
2
Graduate School of Integrated Science and Technology, Shizuoka University
, 3-5-1, Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8561, Japan
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Akihisa Ogino
Akihisa Ogino
2
Graduate School of Integrated Science and Technology, Shizuoka University
, 3-5-1, Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8561, Japan
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a)
Electronic mail: shigeya.kimura@toshiba.co.jp
Note: This paper is part of the Special Collection: Papers from the 33rd International Vacuum Nanoelectronics Conference (33rd IVNC 2020).
J. Vac. Sci. Technol. B 39, 014201 (2021)
Article history
Received:
October 13 2020
Accepted:
December 16 2020
Citation
Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Takuya Fujimoto, Akihisa Ogino; Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes. J. Vac. Sci. Technol. B 1 January 2021; 39 (1): 014201. https://doi.org/10.1116/6.0000710
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