In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.
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January 2020
Research Article|
December 30 2019
Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts
Jing Zhao
;
Jing Zhao
Australia Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales
, Sydney, NSW 2052, Australia
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Anita Ho-Baillie;
Anita Ho-Baillie
Australia Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales
, Sydney, NSW 2052, Australia
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Stephen P. Bremner
Stephen P. Bremner
a)
Australia Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales
, Sydney, NSW 2052, Australia
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a)
Electronic mail: stephen.bremner@unsw.edu.au
J. Vac. Sci. Technol. B 38, 014013 (2020)
Article history
Received:
August 17 2019
Accepted:
December 12 2019
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Citation
Jing Zhao, Anita Ho-Baillie, Stephen P. Bremner; Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts. J. Vac. Sci. Technol. B 1 January 2020; 38 (1): 014013. https://doi.org/10.1116/1.5124840
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