In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.
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Research Article| December 30 2019
Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts
Jing Zhao ;
Jing Zhao, Anita Ho-Baillie, Stephen P. Bremner; Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts. J. Vac. Sci. Technol. B 1 January 2020; 38 (1): 014013. https://doi.org/10.1116/1.5124840
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