Two-step potassium hydroxide etching to enhance aspect ratio in trench fabrication

Among various grating structure fabrication techniques, potassium hydroxide (KOH) wet anisotropic etching of Si(110) wafers offers low cost and impressive aspect ratio over large areas with high etch uniformity. The aspect ratio is ultimately limited by lateral etching that constantly widens the trenches. In this paper, the authors demonstrated a method to double the achievable aspect ratio using two-step KOH etching. After first KOH etching, the grating structure was grown with a thermal oxide; and after removing the oxide from the trench bottom using reactive ion etching, a second KOH etching was carried out with the original trench sidewall protected by the thermal oxide. The authors achieved the highest anisotropy [etching rate ratio of (110) and (111)] of 247 with 50 wt. % KOH at room temperature. Using the two-step KOH etching, it is possible to increase the aspect ratio by more than a factor of 2 while keeping the trench width almost unchanged.