The authors report a novel approach to analyze the behavior of pulsed-laser-induced epitaxy on group-IV semiconductors by spectroscopic ellipsometry measurements and finite-element modeling of the thermo- and hydrodynamic behavior. Gradient-composition epitaxial crystals are obtained from previously atomically sharp heteroepitaxial samples through optically monitored processing with UV excimer laser pulses. Spectroscopic ellipsometry is employed to determine the composition gradient of the semiconductor alloy, and the results are correlated with energy-dispersive x-ray measurements. A finite-element modeling approach is developed based on the experimentally monitored melting dynamics and composition gradient results for understanding and prediction of the dynamics.
Skip Nav Destination
Article navigation
November 2019
Research Article|
November 14 2019
Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
Jon Schlipf
;
Jon Schlipf
1
Dpto. Física Aplicada, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
3
Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg
, Erich-Weinert-Straße 1, 03046 Cottbus, Germany
Search for other works by this author on:
Elena Martín;
Elena Martín
4
Dpto. Mecánica, Máquinas, Motores Térmicos y Fluidos, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
Search for other works by this author on:
Michel Stchakovsky;
Michel Stchakovsky
5
HORIBA FRANCE SAS
, Avenue de la Vauve, Passage Jobin Yvon CS 45002, 91120 Palaiseau, France
Search for other works by this author on:
Alessandro Benedetti;
Alessandro Benedetti
6
CACTI, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
7
European Commission, Joint Research Centre
, Directorate for Nuclear Safety and Security, P.O. Box 2340, 76125 Karlsruhe, Germany
Search for other works by this author on:
Inga A. Fischer;
Inga A. Fischer
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
3
Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg
, Erich-Weinert-Straße 1, 03046 Cottbus, Germany
Search for other works by this author on:
Jörg Schulze;
Jörg Schulze
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Search for other works by this author on:
Stefano Chiussi
Stefano Chiussi
1
Dpto. Física Aplicada, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
Search for other works by this author on:
Note: This paper is part of the Conference Collection: 8th International Conference on Spectroscopic Ellipsometry 2019, ICSE.
J. Vac. Sci. Technol. B 37, 061213 (2019)
Article history
Received:
July 31 2019
Accepted:
October 23 2019
Citation
Jon Schlipf, Elena Martín, Michel Stchakovsky, Alessandro Benedetti, Inga A. Fischer, Jörg Schulze, Stefano Chiussi; Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy. J. Vac. Sci. Technol. B 1 November 2019; 37 (6): 061213. https://doi.org/10.1116/1.5122777
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
202
Views
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Related Content
Molecular beam epitaxy growth and characterization of GePb alloys
J. Vac. Sci. Technol. B (May 2024)
Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Appl. Phys. Lett. (May 2012)
Real-time ellipsometric modeling and characterization of the evolution of nanometer-scale Ge islands and pits in Ge homoepitaxy
J. Appl. Phys. (November 2009)
Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra
Appl. Phys. Lett. (September 2007)
Ellipsometric study of adsorption on nanopatterned block copolymer substrates
J. Chem. Phys. (March 2005)