The authors report a novel approach to analyze the behavior of pulsed-laser-induced epitaxy on group-IV semiconductors by spectroscopic ellipsometry measurements and finite-element modeling of the thermo- and hydrodynamic behavior. Gradient-composition epitaxial crystals are obtained from previously atomically sharp heteroepitaxial samples through optically monitored processing with UV excimer laser pulses. Spectroscopic ellipsometry is employed to determine the composition gradient of the semiconductor alloy, and the results are correlated with energy-dispersive x-ray measurements. A finite-element modeling approach is developed based on the experimentally monitored melting dynamics and composition gradient results for understanding and prediction of the dynamics.
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November 2019
Research Article|
November 14 2019
Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy Available to Purchase
Jon Schlipf
;
Jon Schlipf
1
Dpto. Física Aplicada, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
3
Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg
, Erich-Weinert-Straße 1, 03046 Cottbus, Germany
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Elena Martín;
Elena Martín
4
Dpto. Mecánica, Máquinas, Motores Térmicos y Fluidos, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
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Michel Stchakovsky;
Michel Stchakovsky
5
HORIBA FRANCE SAS
, Avenue de la Vauve, Passage Jobin Yvon CS 45002, 91120 Palaiseau, France
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Alessandro Benedetti;
Alessandro Benedetti
6
CACTI, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
7
European Commission, Joint Research Centre
, Directorate for Nuclear Safety and Security, P.O. Box 2340, 76125 Karlsruhe, Germany
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Inga A. Fischer;
Inga A. Fischer
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
3
Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg
, Erich-Weinert-Straße 1, 03046 Cottbus, Germany
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Jörg Schulze;
Jörg Schulze
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Stefano Chiussi
Stefano Chiussi
1
Dpto. Física Aplicada, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
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Jon Schlipf
1,2,3
Elena Martín
4
Michel Stchakovsky
5
Alessandro Benedetti
6,7
Inga A. Fischer
2,3
Jörg Schulze
2
Stefano Chiussi
1
1
Dpto. Física Aplicada, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
2
Institut für Halbleitertechnik (IHT), Universität Stuttgart
, Pfaffenwaldring 47, 70569 Stuttgart, Germany
3
Experimentalphysik und Funktionale Materialien, BTU Cottbus-Senftenberg
, Erich-Weinert-Straße 1, 03046 Cottbus, Germany
4
Dpto. Mecánica, Máquinas, Motores Térmicos y Fluidos, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
5
HORIBA FRANCE SAS
, Avenue de la Vauve, Passage Jobin Yvon CS 45002, 91120 Palaiseau, France
6
CACTI, Universidade de Vigo
, Rua Maxwell s/n, Campus Lagoas, 36310 Vigo, Spain
7
European Commission, Joint Research Centre
, Directorate for Nuclear Safety and Security, P.O. Box 2340, 76125 Karlsruhe, Germany
Note: This paper is part of the Conference Collection: 8th International Conference on Spectroscopic Ellipsometry 2019, ICSE.
J. Vac. Sci. Technol. B 37, 061213 (2019)
Article history
Received:
July 31 2019
Accepted:
October 23 2019
Citation
Jon Schlipf, Elena Martín, Michel Stchakovsky, Alessandro Benedetti, Inga A. Fischer, Jörg Schulze, Stefano Chiussi; Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy. J. Vac. Sci. Technol. B 1 November 2019; 37 (6): 061213. https://doi.org/10.1116/1.5122777
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