The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, , thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering. After rapid thermal annealing (RTA), crystallization of our samples is analyzed by grazing incidence x-ray diffraction. Changing the pressure inside the chamber during deposition leads to grow amorphous or monoclinic phase (m-phase). The authors demonstrate that if the films are crystallized in the m-phase after deposition, no ferroelectric/orthorhombic phase can be obtained further. On the contrary, when the as-deposited film is amorphous, the ferroelectric/orthorhombic phase appears after the RTA.
Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering
Note: This paper is part of the Conference Collection from the 20th Workshop on Dielectrics in Microelectronics Conference.
Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin; Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering. J. Vac. Sci. Technol. B 1 March 2019; 37 (2): 021203. https://doi.org/10.1116/1.5060643
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