A new technique to analyze random telegraph noise (RTN) is proposed. It has been used for the analysis of current versus time measurements performed on Ni/HfO2/Si-n+-based resistive random access memories. The method allows us to study current-time traces with a massive number of data without losing the capability of dealing with background noise and discriminating the active defects responsible for current fluctuations. A comparison of this algorithm with the previous ones is given in terms of computing time and RTN description accuracy. The computing efficiency and the validity of the model have been proved, and therefore, it is feasible to propose applications for real time analysis making use of this new algorithm.

Topics
Current-voltage characteristic, Information technology, Resistive random-access memory, Nonvolatile memory, Atomic layer deposition, Metal oxides
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