Three-dimensional geometrical shaping of semiconductor heterostructures could be realized through research of their etch rate and inclination side wall angle control. The formation of complicate shapes requires repeating several times the technological processes such as mask deposition, lithography, and heterostructures etching. In this article, experimental results of the study of double repeated reactive ion etching (RIE) process are presented, which was performed without the second photolithography process. This solution allows reducing the duration and costs of new piezotronic devices fabrication through decreasing the number of technological steps that are necessary for devices fabrication. Additionally, the evolution of depth and side walls inclination was studied during the second stage RIE. The two-stage RIE process allowed obtaining trenches of two different depths in the surface.

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