The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1–2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.
References
1.
M.
Balog
, M.
Schieber
, M.
Michman
, and S.
Patai
, Thin Solid Films
41
, 247
(1977
). 2.
J.
Robertson
, Eur. Phys. J. Appl. Phys.
28
, 265
(2004
). 3.
J. P.
Locquet
, C.
Marchiori
, M.
Sousa
, J.
Fompeyrine
, and J.
Won Seo
, J. Appl. Phys.
100
, 051610
(2006
). 4.
G.
Ribes
, J.
Mitard
, M.
Denais
, S.
Bruyere
, F.
Monsieur
, C.
Parthasarathy
, E.
Vincent
, and G.
Ghibaudo
, IEEE Trans. Device Mater. Reliab.
5
, 5
(2005
). 5.
A. I.
Kingon
, J.-P.
Maria
, and S. K.
Streiffer
, Nature
406
, 1032
(2000
). 6.
M.
Al-Kuhaili
, Opt. Mater.
27
, 383
(2004
). 7.
V.
Jankovic
and J. P.
Chang
, J. Electrochem. Soc.
158
, P115
(2011
). 8.
Vl.
Kolkovsky
, K.
Lukat
, E.
Kurth
, and C.
Kunath
, Solid State Electron.
106
, 63
(2015
). 9.
K.
Bedner
, “Fabrication and characterization of ion-sensitive field-effect transistors using silicon-on-insulator technology,” Ph.D. thesis (University of Basel, Basel, 2013).10.
M.-T.
Ho
, Y.
Wang
, R. T.
Brewer
, L. S.
Wielunski
, Y. J.
Chabal
, N.
Moumen
, and M.
Boleslawski
, Appl. Phys. Lett.
87
, 133103
(2005
). 11.
D. M.
Hausmann
and R. G.
Gordon
, J. Cryst. Growth
249
, 251
(2003
). 12.
K.
Kukli
, M.
Ritala
, T.
Sajavaara
, J.
Keinonen
, and M.
Leskela
, Chem. Vapor Depos.
8
, 199
(2002
). 13.
J. F.
Conley
, Y.
Ono
, W.
Zhuang
, D. J.
Tweet
, W.
Gao
, S. K.
Mohammed
, and R.
Solanki
, Electrochem. Solid State Lett.
5
, C57
(2002
). 14.
C.
Hobbs
et al, Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, 10–12 June 2003 (IEEE, Piscataway, NJ, 2003), p. 9.15.
A.
Callegari
, E.
Cartier
, M.
Gribelyuk
, H. F.
Okorn-Schmidt
, and T.
Zabel
, J. Appl. Phys.
90
, 6466
(2001
). 16.
L.
Kang
et al, IEDM Technical Digest, San Francisco, 10–13 December 2000 (IEEE, Piscataway, NJ, 2000), p. 35.17.
T.
Grasser
, Bias Temperature Instability for Devices and Circuits
(Springer Science & Business Media
, New York
, 2013
).18.
19.
A.
Kerber
and E. A.
Cartier
, IEEE Trans. Device Mater. Reliab.
9
, 147
(2009
). 20.
C. G.
Van de Walle
and J.
Neugebauer
, Nature
423
, 626
(2003
). 21.
H.
Li
and J.
Robertson
, J. Appl. Phys.
115
, 203708
(2014
). 22.
J. L.
Lyons
, A.
Janotti
, and C. G.
Van de Walle
, Microelectron. Eng.
88
, 1452
(2011
). 23.
M.
Kaviani
, V. V.
Afanas’ev
, and A. L.
Shluger
, Phys. Rev. B
95
, 075117
(2017
). 24.
M.
Houssa
, S.
De Gendt
, J. L.
Autran
, G.
Groeseneken
, and M. M.
Heyns
, Appl. Phys. Lett.
85
, 2101
(2004
). 25.
M. F.
Al-Kuhaili
, S. M. A.
Durrani
, I. A.
Bakhtiari
, M. A.
Dastageer
, and M. B.
Mekki
, Mater. Chem. Phys.
126
, 515
(2011
). 26.
D. A.
Neumayer
and E.
Cartier
, J. Appl. Phys.
90
, 1801
(2001
). 27.
D.
Ceresoli
and D.
Vanderbilt
, Phys. Rev. B
74
, 125108
(2006
). 28.
F. M.
Li
, B. C.
Bayer
, S.
Hofmann
, J. D.
Dutson
, S. J.
Wakeham
, M. J.
Thwaites
, W. I.
Milne
, and A. J.
Flewitt
, Appl. Phys. Lett.
98
, 252903
(2011
). 29.
D. K.
Schroder
, Semiconductor Material and Device Characterization
, 3d ed. (Wiley Interscience
, New York
, 1998
).30.
E. H.
Nicollian
and J. R.
Brews
, MOS (Metal Oxide Semiconductor) Physics and Technology
(Wiley Interscience
, New York
, 1982
).31.
C. N.
Berglund
, IEEE Trans. Electron Devices
13
, 701
(1966
). 32.
L. M.
Terman
, Solid State Electron.
5
, 285
(1962
). 33.
E.
Arnold
and G.
Abowitz
, Appl. Phys. Lett.
9
, 344
(1960
). 34.
See: http://www.srim.org/.
35.
R.
Choi
, K.
Onishi
, C. S.
Kang
, H.-J.
Cho
, Y. H.
Kim
, S.
Krishnan
, M. S.
Akbar
, and Jack C.
Lee
, IEEE Electron Device Lett.
24
, 144
(2003
). 36.
Vl.
Kolkovsky
, R.
Stübner
, S.
Langa
, U.
Wende
, B.
Kaiser
, H.
Conrad
, and H.
Schenk
, Solid State Electron.
123
, 89
(2016
). 37.
Vl.
Kolkovsky
and R.
Stübner
, Phys. B: Condens. Matter
535
, 171
(2018
). 38.
L.
Scheffler
, Vl.
Kolkovsky
, E. V.
Lavrov
, and J.
Weber
, J. Phys.: Condens. Matter
23
, 334208
(2011
). 39.
R.
Stübner
, L.
Scheffler
, Vl.
Kolkovsky
, and J.
Weber
, J. Appl. Phys.
119
, 205709
(2016
). 40.
R.
Stübner
, Vl.
Kolkovsky
, J.
Weber
, and N. V.
Abrosimov
, Solid State Phenom.
242
, 184
(2016
). 41.
S. F. J.
Cox
et al, Proceedings of the 27th International Conference on the Physics of Semiconductors, Arizona, 25–30 July 2004 (American Institute of Physics, Melville, NY, 2005), Vol. 772, p. 193.© 2018 Author(s).
2018
Author(s)
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