The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1–2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.
Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
Note: This paper is part of the Conference Collection from the 20th Workshop on Dielectrics in Microelectronics Conference.
Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt, Rene Heller; Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique. J. Vac. Sci. Technol. B 1 November 2018; 36 (6): 062901. https://doi.org/10.1116/1.5045634
Download citation file: