In this report, the operation of a normally-off vertical gallium nitride (GaN) metal-oxide field effect transistor with a threshold voltage of 5 V is demonstrated. A crucial step during device fabrication is the formation of the highly n-doped source layer. The authors infer that the use of molecular beam epitaxy (MBE) is highly beneficial for suppressing diffusion of the magnesium (Mg) p-type dopants from the body layer grown by metal-organic vapor phase epitaxy into the source cap. Repassivation of the previously activated Mg acceptors by a hydrogen out-diffusion treatment is suppressed in the ultrahigh vacuum growth environment. Structural and electrical data indicate that the defect density of the GaN substrate is currently limiting device performance much more compared to other effects like varying surface morphology resulting from fluctuations in III/N stoichiometry during the MBE growth.
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March 2018
Research Article|
March 05 2018
Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region Available to Purchase
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Papers from the 33rd North American Conference on Molecular Beam Epitaxy
Rico Hentschel;
Rico Hentschel
a)
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Stefan Schmult;
Stefan Schmult
TU Dresden, Institute of Semiconductors and Microsystems
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Andre Wachowiak;
Andre Wachowiak
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Andreas Großer;
Andreas Großer
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Jan Gärtner;
Jan Gärtner
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Thomas Mikolajick
Thomas Mikolajick
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
and TU Dresden, Institute of Semiconductors and Microsystems
, Noethnitzer Str. 64, 01187 Dresden, Germany
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Rico Hentschel
a)
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
Stefan Schmult
TU Dresden, Institute of Semiconductors and Microsystems
, Noethnitzer Str. 64, 01187 Dresden, Germany
Andre Wachowiak
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
Andreas Großer
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
Jan Gärtner
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
Thomas Mikolajick
Namlab gGmbH
, Noethnitzer Str. 64, 01187 Dresden, Germany
and TU Dresden, Institute of Semiconductors and Microsystems
, Noethnitzer Str. 64, 01187 Dresden, Germany
a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 36, 02D109 (2018)
Article history
Received:
November 27 2017
Accepted:
February 20 2018
Citation
Rico Hentschel, Stefan Schmult, Andre Wachowiak, Andreas Großer, Jan Gärtner, Thomas Mikolajick; Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region. J. Vac. Sci. Technol. B 1 March 2018; 36 (2): 02D109. https://doi.org/10.1116/1.5017291
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