A comparative study on the direct-current (dc) electrical performance and optical characteristics of unirradiated and 120 MRad 60Co-gamma-ray (γ-ray) irradiated AlGaN/GaN high electron mobility transistors (HEMTs) was performed. The devices fabricated on an irradiated HEMT epilayer structure show slight degradation/alteration in the dc characteristics such as source–drain current–voltage (IDS-VDS), transfer (IDS-VGS), transconductance, and gate current–voltage, indicating the presence of radiation-induced defects. Also, a shift in flat band voltage was observed from the capacitance-voltage measurements. Micro-Raman spectroscopy and photoluminescence (PL) spectroscopy were used to compare the crystal quality of the heterojunction. No shift in the Raman peak frequency position was observed in both the unirradiated and irradiated samples, which implies that the irradiation did not produce an additional strain to the HEMT layers. However, the full width at half maximum of the Raman and near-band-edge PL peaks has increased after irradiation, which suggests the degradation of crystal quality. The spectroscopic photocurrent–voltage study with sub-bandgap and above bandgap illumination confirmed the pre-existence of sub-bandgap defects in the heterostructure and revealed the possibility of their rearrangement or the introduction of new defects after the irradiation. It was concluded that AlGaN/GaN HEMTs are relatively resistant to high dose (120 MRad) gamma-ray irradiation, but they can introduce additional traps or reconfigure the pre-existing traps, influencing the electrical and optical characteristics of AlGaN/GaN HEMTs.
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Research Article|
April 10 2017
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
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Min P. Khanal;
Min P. Khanal
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Burcu Ozden;
Burcu Ozden
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Kyunghyuk Kim;
Kyunghyuk Kim
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Sunil Uprety;
Sunil Uprety
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Vahid Mirkhani;
Vahid Mirkhani
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Kosala Yapabandara;
Kosala Yapabandara
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Ayayi C. Ahyi;
Ayayi C. Ahyi
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Minseo Park
Minseo Park
a)
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Min P. Khanal
Burcu Ozden
Kyunghyuk Kim
Sunil Uprety
Vahid Mirkhani
Kosala Yapabandara
Ayayi C. Ahyi
Minseo Park
a)
Department of Physics,
Auburn University
, Auburn, Alabama 36849 a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. B 35, 03D107 (2017)
Article history
Received:
January 15 2017
Accepted:
March 27 2017
Citation
Min P. Khanal, Burcu Ozden, Kyunghyuk Kim, Sunil Uprety, Vahid Mirkhani, Kosala Yapabandara, Ayayi C. Ahyi, Minseo Park; Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors. J. Vac. Sci. Technol. B 1 May 2017; 35 (3): 03D107. https://doi.org/10.1116/1.4979976
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