In this paper, the authors report the device instability of solution based ZnO thin film transistors by studying the time-evolution of electrical characteristics during electrical stressing and subsequent relaxation. A systematic comparison between ambient and vacuum conditions was carried out to investigate the effect of adsorption of oxygen and water molecules, which leads to the creation of defects in the channel layer. The observed subthreshold swing and change in field effect mobility under gate bias stressing have supported the fact that oxygen and moisture directly affect the threshold voltage shift. The authors have presented the comprehensive analysis of device relaxation under both ambient and vacuum conditions to further confirm the defect creation and charge trapping/detrapping process since it has not been reported before. It was hypothesized that chemisorbed molecules form acceptorlike traps and can diffuse into the ZnO thin film through the void on the grain boundary, being relocated even near the semiconductor/dielectric interface. The stretched exponential and power law model fitting reinforce the conclusion of defect creation by oxygen and moisture adsorption on the active layer.
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Research Article|
March 29 2017
Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
Kosala Yapabandara;
Kosala Yapabandara
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Vahid Mirkhani;
Vahid Mirkhani
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Muhammad Shehzad Sultan;
Muhammad Shehzad Sultan
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Burcu Ozden;
Burcu Ozden
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Min P. Khanal;
Min P. Khanal
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Minseo Park;
Minseo Park
a)
Department of Physics,
Auburn University
, Auburn, Alabama 36849
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Shiqiang Wang;
Shiqiang Wang
Department of Electrical and Computer Engineering,
Auburn University
, Auburn, Alabama 36849
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Michael C. Hamilton;
Michael C. Hamilton
Department of Electrical and Computer Engineering,
Auburn University
, Auburn, Alabama 36849
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Yoonsung Chung;
Yoonsung Chung
Materials Research and Education Center, Department of Mechanical Engineering,
Auburn University
, Auburn, Alabama 36849
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Dong-Joo Kim;
Dong-Joo Kim
Materials Research and Education Center, Department of Mechanical Engineering,
Auburn University
, Auburn, Alabama 36849
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Mobbassar Hassan Sk
Mobbassar Hassan Sk
Center for Advanced Materials, CAM,
Qatar University
, Doha 2713, Qatar
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Kosala Yapabandara
Vahid Mirkhani
Muhammad Shehzad Sultan
Burcu Ozden
Min P. Khanal
Minseo Park
a)
Shiqiang Wang
Michael C. Hamilton
Yoonsung Chung
Dong-Joo Kim
Mobbassar Hassan Sk
Department of Physics,
Auburn University
, Auburn, Alabama 36849a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 35, 03D104 (2017)
Article history
Received:
December 16 2016
Accepted:
March 14 2017
Citation
Kosala Yapabandara, Vahid Mirkhani, Muhammad Shehzad Sultan, Burcu Ozden, Min P. Khanal, Minseo Park, Shiqiang Wang, Michael C. Hamilton, Yoonsung Chung, Dong-Joo Kim, Mobbassar Hassan Sk; Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers. J. Vac. Sci. Technol. B 1 May 2017; 35 (3): 03D104. https://doi.org/10.1116/1.4979321
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