In-depth study of the physics behind resistive switching in TiN/Ti/HfO₂/W structures Available to Purchase

A physical simulation procedure was used to describe the processes behind the operation of devices based on TiN/Ti/HfO₂/W structures. The equations describing the creation and destruction of conductive filaments formed by oxygen vacancies are solved in addition to the heat equation. The resistances connected with the metal electrodes were also considered. Resistive random access memories analyzed were fabricated, and many of the characteristics of the experimental data were reproduced with accuracy. Truncated-cone shaped filaments were employed in the model developed with metallic-like transport characteristics. A hopping current was also taken into account to describe the electron transport between the filament tip and the electrode. Hopping current is an essential component in the device high resistance state.