This letter reports an AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuit (MMIC) operating at V-band using advanced gate processing technology. The AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) employed a gate length of 100 nm with a double-deck shaped (DDS) field-plate, which resulted in a cut-off frequency of 68 GHz and a maximum oscillation frequency of 160 GHz at the drain voltage of 15 V with significant reduction in gate resistance and improvement of current collapse phenomenon. A 60 GHz three-stage PA MMIC composed of two 4 × 37 μm and an 8 × 37 μm AlGaN/GaN-on-Si HEMTs successfully demonstrated using the DDS field-plate gate technology, which exhibited a continuous wave output power of >23.5 dBm at the drain voltage of 18 V at 58 GHz. This is the highest output power performance for V-band power amplification based on AlGaN/GaN-on-Si technology.
Skip Nav Destination
Article navigation
July 2016
Letter|
April 18 2016
V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure
Dong-Hwan Kim;
Dong-Hwan Kim
Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center,
Seoul National University
, Seoul 151-744, South Korea
Search for other works by this author on:
Su-Keun Eom;
Su-Keun Eom
Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center,
Seoul National University
, Seoul 151-744, South Korea
Search for other works by this author on:
Myoung-Jin Kang;
Myoung-Jin Kang
Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center,
Seoul National University
, Seoul 151-744, South Korea
Search for other works by this author on:
Jun-Seok Jeong;
Jun-Seok Jeong
Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center,
Seoul National University
, Seoul 151-744, South Korea
Search for other works by this author on:
Kwang-Seok Seo;
Kwang-Seok Seo
a)
Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center,
Seoul National University
, Seoul 151-744, South Korea
Search for other works by this author on:
Ho-Young Cha
Ho-Young Cha
b)
School of Electronic and Electrical Engineering,
Hongik University
, Seoul 121-791, South Korea
Search for other works by this author on:
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 34, 040602 (2016)
Article history
Received:
February 23 2016
Accepted:
April 05 2016
Citation
Dong-Hwan Kim, Su-Keun Eom, Myoung-Jin Kang, Jun-Seok Jeong, Kwang-Seok Seo, Ho-Young Cha; V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure. J. Vac. Sci. Technol. B 1 July 2016; 34 (4): 040602. https://doi.org/10.1116/1.4947005
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Related Content
A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer
Rev. Sci. Instrum. (May 2017)
Liquid crystal polymer receiver modules for electron cyclotron emission imaging on the DIII-D tokamak
Rev. Sci. Instrum. (October 2018)
A Broadband and Miniaturized X‐band MMIC Image Rejection Down‐converter in InGaP/GaAs HBT Technology
AIP Conference Proceedings (December 2011)
Selectively dry gate recessed GaAs metal–semiconductor field‐effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits
J. Vac. Sci. Technol. B (November 1993)
Optimized Fabrication Process of PZT Thin Film Capacitor for MMIC Applications
AIP Conference Proceedings (June 2009)