This letter reports an AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuit (MMIC) operating at V-band using advanced gate processing technology. The AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) employed a gate length of 100 nm with a double-deck shaped (DDS) field-plate, which resulted in a cut-off frequency of 68 GHz and a maximum oscillation frequency of 160 GHz at the drain voltage of 15 V with significant reduction in gate resistance and improvement of current collapse phenomenon. A 60 GHz three-stage PA MMIC composed of two 4 × 37 μm and an 8 × 37 μm AlGaN/GaN-on-Si HEMTs successfully demonstrated using the DDS field-plate gate technology, which exhibited a continuous wave output power of >23.5 dBm at the drain voltage of 18 V at 58 GHz. This is the highest output power performance for V-band power amplification based on AlGaN/GaN-on-Si technology.

1.
U. K.
Mishra
,
L.
Shen
,
T. E.
Kazior
, and
Y. F.
Wu
,
Proc. IEEE
96
,
287
(
2008
).
2.
D.
Marti
,
S.
Tirelli
,
A. R.
Alt
,
J.
Roberts
, and
C. R.
Bolognesi
,
IEEE Electron Device Lett.
33
,
1372
(
2012
).
3.
F.
Medjdoub
,
M.
Zegaoui
,
B.
Grimbert
,
D.
Ducatteau
,
N.
Rolland
, and
P. A.
Rolland
,
IEEE Electron Device Lett.
33
,
1168
(
2012
).
4.
S.
Bouziddriad
,
H.
Maher
,
N.
Defrance
,
V.
Hoel
,
J. C.
De Jaeger
,
M.
Renvoise
, and
P.
Frijlink
,
IEEE Electron Device Lett.
34
,
36
(
2013
).
5.
S.
Huang
 et al.,
IEEE Electron Device Lett.
35
,
315
(
2014
).
6.
P.
Altuntas
 et al.,
IEEE Electron Device Lett.
36
,
303
(
2015
).
7.
D. C.
Dumka
,
C.
Lee
,
H. Q.
Tserng
,
P.
Saunier
, and
M.
Kumar
,
IEEE Electronics Lett.
40
,
357
(
2004
).
8.
C. H.
Chang
,
H. T.
Hsu
,
L. C.
Huang
,
C. Y.
Chiang
, and
E. Y.
Chang
,
Asia Pacific Microwave Conference Proceedings
(
2012
), pp.
941
943
.
9.
M. S.
Lee
,
D. H.
Kim
,
S. K.
Eom
,
H. Y.
Cha
, and
K. S.
Seo
,
IEEE Electron Device Lett.
35
,
995
(
2014
).
10.
D. M.
Fanning
 et al.,
CS MANTECH Conference
(
2005
), p.
8.3
.
11.
B.
Geller
,
A.
Hanson
,
A.
Chaudhari
,
A.
Edwards
, and
I. C.
Kizilyalli
,
IEEE Radio Frequency Integrated Circuits Symposium
(
2008
), pp.
527
530
.
12.
S.
Yoshida
,
M.
Tanomura
,
Y.
Murase
,
K.
Yamanoguchi
,
K.
Ota
,
K.
Matsunaga
, and
H.
Shimawaki
,
Microwave Symposium Digest
(
2009
), pp.
665
668
.
13.
D. H.
Kim
,
J. H.
Kim
,
S. K.
Eom
,
M. S.
Lee
, and
K. S.
Seo
,
CS MANTECH Conference
(
2014
), pp.
241
244
.
14.
J. C.
Her
,
H. J.
Cho
,
C. S.
Yoo
,
H. Y.
Cha
,
J. E.
Oh
, and
K. S.
Seo
,
Jpn. J. Appl. Phys., Part 1
49
,
041002
(
2010
).
15.
D.
Buttari
 et al.,
IEEE Electron Device Lett.
23
,
118
(
2002
).
16.
N. H.
Lee
,
M. S.
Lee
,
W. J.
Choi
,
D. H.
Kim
,
N. C.
Jeon
,
S. H.
Choi
, and
K. S.
Seo
,
Jpn. J. Appl. Phys., Part 1
53
,
04EF10
(
2014
).
17.
S. G.
Han
,
Y. H.
Oh
,
M. S.
Lee
,
D. H.
Kim
, and
K. S.
Seo
,
International Conference on Solid State Devices and Materials
(
2012
), pp.
212
213
.
18.
D. H.
Kim
,
S. K.
Eom
,
S. G.
Han
, and
K. S.
Seo
,
International Conference on Solid State Devices and Materials
(
2013
), pp.
150
151
.
19.
J. H.
Kim
,
H. J.
Park
,
D. H.
Kim
,
M. S.
Lee
,
K. S.
Seo
, and
Y. W.
Kwon
,
IEEE Asia Pacific Microwave Conference Proceedings
(
2013
), pp.
775
777
.
20.
O.
Jardel
,
F.
De Groote
,
T.
Reveyrand
,
J. C.
Jacquet
,
C.
Charbonniaud
,
J. P.
Teyssier
,
D.
Floriot
, and
R.
Quere
,
IEEE Trans. Microwave Theory Tech.
55
,
2660
(
2007
).
21.
C. Y.
Ng
,
K.
Takagi
,
T.
Senju
,
K.
Matsushita
,
H.
Sakurai
,
K.
Onodera
,
S.
Nakanishi
,
K.
Kudora
, and
T.
Soejima
,
IEEE European Microwave Conference
(
2014
) pp.
1348
1351
.
22.
C. F.
Campbell
,
Y.
Liu
,
M. Y.
Kao
, and
S.
Nayak
,
IEEE COMCAS
(
2013
), pp.
1
5
.
23.
A. M.
Darwish
,
K.
Boutros
,
B.
Luo
,
B.
Hubschman
,
E.
Viveiros
, and
H. A.
Hung
,
IEEE Microwave Symposium Digest
(
2006
), pp.
730
733
.
24.
A.
Brown
,
K.
Brown
,
J.
Chen
,
K. C.
Hwang
,
N.
Kolias
, and
R.
Scott
,
IEEE Microwave Symposium Digest
(
2011
), pp.
1
4
.
25.
K.
Makiyama
 et al.,
Phys. Status Solidi C
8
,
2442
(
2011
).
26.
M.
Micovic
 et al.,
IEEE Microwave Symposium Digest
(
2010
), pp.
237
239
.
27.
M.
van Heijningen
 et al.,
Microwave Integrated Circuits Conference
(
2012
), pp.
135
138
.
28.
P.
Bruckner
,
R.
Kiefer
,
C.
Haupt
,
A.
Leuther
,
S.
Muller
,
R.
Quay
,
D.
Schwantuschke
,
M.
Mikulla
, and
O.
Ambacher
,
Phys. Status Solidi C
9
,
903
(
2012
).
29.
M.
van Heijningen
,
G.
van der Bent
,
M.
Rodenburg
,
F. E.
van Vliet
,
R.
Quay
,
P.
Buckner
,
D.
Schwantuschke
,
P.
Jukkala
, and
T.
Narhi
,
Microwave Technology and Techniques Workshop
(
2012
).
You do not currently have access to this content.