Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures

The authors have explored emission wavelength control in InAs quantum dashes (QDashes) grown on InP substrates by manipulation of the InAs thickness and by incorporating Sb into the QDashes. It is found that by increasing the InAs coverage, the photoluminescence (PL) emission wavelength can be extended up to 2.15 μm. The authors have also demonstrated that by introducing Sb into the InAs QDashes, the emission wavelength can be further increased to 2.25 μm. They have characterized surface morphology using atomic force microscopy to study the effect of both the above-mentioned techniques on the shape and size of InAs QDashes. Also, temperature-dependent PL studies are carried out to understand the carrier dynamics in InAs QDashes emitting at extended wavelengths. Based on these results, it is concluded that the incorporation of Sb is a better technique compared to increasing InAs coverage to extend the emission wavelength of InAs QDashes.