The authors describe a new directed ribbon-beam system capable of a combination of plasma-based processing with that of a ribbon-ion-beam implantation system. In particular, the authors describe how they are utilizing this system for novel reactive-ion-etching processing with high directionality in the planes perpendicular to the wafer surface and at angles non-normal to the wafer. Examples are shown on nanopatterned structures. The authors demonstrate how these results and capability can solve several problems in current and future device patterning.
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