The authors describe a new directed ribbon-beam system capable of a combination of plasma-based processing with that of a ribbon-ion-beam implantation system. In particular, the authors describe how they are utilizing this system for novel reactive-ion-etching processing with high directionality in the planes perpendicular to the wafer surface and at angles non-normal to the wafer. Examples are shown on nanopatterned structures. The authors demonstrate how these results and capability can solve several problems in current and future device patterning.
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Research Article| September 30 2015
Directed ribbon-beam capability for novel etching applications
Simon Ruffell, Anthony Renau; Directed ribbon-beam capability for novel etching applications. J. Vac. Sci. Technol. B 1 November 2015; 33 (6): 06FA02. https://doi.org/10.1116/1.4932161
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