The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21 cm2V−1s−1, 107, and 0.5–1 V/decade, respectively. The memory window of 13 V at ±20 V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10 mm. The memory on/off ratio was initially 5 × 104 and maintained at 102 even after a lapse of 3600 s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.

1.
2.
T.
Sekitani
,
T.
Yokota
,
U.
Zschieschang
,
H.
Klauk
,
S.
Bauer
,
K.
Takeuchi
,
M.
Takamiya
,
T.
Sakurai
, and
T.
Someya
,
Science
326
,
1516
(
2009
).
3.
Y.
Ji
,
D. F.
Zeigler
,
D. S.
Lee
,
H.
Choi
,
A. K.-Y.
Jen
,
H. C.
Ko
, and
T.-W.
Kim
,
Nat. Commun.
4
,
2707
(
2013
).
4.
W.
Deng
,
X.
Zhang
,
H.
Pan
,
Q.
Shang
,
J.
Wang
,
X.
Zhang
,
X.
Zhang
, and
J.
Jie
,
Sci. Rep.
4
,
5358
(
2014
).
5.
S.
Xu
 et al,
Nat. Commun.
4
,
1543
(
2013
).
6.
K.
Nagashima
 et al,
Sci. Rep.
4
,
5532
(
2014
).
7.
S.-W.
Jung
 et al,
Org. Electron.
16
,
46
(
2015
).
8.
Y.-C.
Lai
,
Y.-X.
Wang
,
Y.-C.
Huang
,
T.-Y.
Lin
,
Y.-P.
Hsieh
,
Y.-J.
Yang
, and
Y.-F.
Chen
,
Adv. Funct. Mater.
24
,
1430
(
2014
).
9.
K.-J.
Baeg
 et al,
Org. Electron.
14
,
1407
(
2013
).
10.
K.-J.
Baeg
 et al,
ACS Appl. Mater. Interfaces
4
,
6176
(
2012
).
11.
K.-J.
Baeg
,
D.
Khim
,
S.-W.
Jung
,
M.
Kang
,
I.-K.
You
,
D.-Y.
Kim
,
A.
Facchetti
, and
Y.-Y.
Noh
,
Adv. Mater.
24
,
5433
(
2012
).
12.
B.
Kam
 et al,
IEEE Electron Device Lett.
35
,
539
(
2014
).
13.
R. H.
Kim
 et al,
Nat. Commun.
5
,
3583
(
2014
).
14.
J. A.
Caraveo-Frescas
,
M. A.
Khan
, and
H. N.
Alshareef
,
Sci. Rep.
4
,
5243
(
2014
).
15.
Y.-C.
Lai
 et al,
NPG Asia Mater.
6
,
e87
(
2014
).
16.
D.
Son
 et al,
Nat. Nanotechnol.
9
,
397
(
2014
).
17.
S.-W.
Jung
,
B. S.
Na
,
K.-J.
Baeg
,
M.
Kim
,
S.-M.
Yoon
,
J.
Kim
,
D.-Y.
Kim
, and
I.-K.
You
,
ETRI J.
35
,
734
(
2013
).
18.
S.-W.
Jung
,
J.-K.
Lee
,
Y. S.
Kim
,
S.-M.
Yoon
,
I.-K.
You
,
B.-G.
Yu
, and
Y.-Y.
Noh
,
Curr. Appl. Phys.
10
,
e58
(
2010
).
19.
S.-M.
Yoon
,
S.
Yang
,
S.-H. K.
Park
,
D.-H.
Cho
,
S.-W.
Jung
,
O.-S.
Kwon
,
C.
Byun
, and
C.-S.
Hwang
,
Adv. Funct. Mater.
20
,
921
(
2010
).
20.
J.-S.
Choi
 et al,
IEEE Electron Device Lett.
35
,
762
(
2014
).
21.
S.-M.
Yoon
,
S.-H.
Yang
,
S.-W.
Jung
,
C.-W.
Byun
,
S.-H. K.
Park
,
C.-S.
Hwang
,
G.-G.
Lee
,
E.
Tokumitsu
, and
H.
Ishiwara
,
Appl. Phys. Lett.
96
,
232903
(
2010
).
22.
G.-G.
Lee
,
E.
Tokumitsu
,
S.-M.
Yoon
,
Y.
Fujisaki
,
J.-W.
Yoon
, and
H.
Ishiwara
,
Appl. Phys. Lett.
99
,
012901
(
2011
).
23.
S.-M.
Yoon
,
S.
Yang
,
M.-K.
Ryu
,
C.-W.
Byun
,
S.-W.
Jung
,
S.-H. K.
Park
,
C.-S.
Hwang
, and
K.-I.
Cho
,
IEEE Trans. Electron Devices
58
,
2135
(
2011
).
24.
A.
Breemen
,
B.
Kam
,
B.
Cobb
,
F. G.
Rodriguez
,
G.
Heck
,
K.
Myny
,
A.
Marrani
,
V.
Vinciguerra
, and
G.
Gelinck
,
Org. Electron.
14
,
1966
(
2013
).
25.
L.
Petti
,
N.
Münzenrieder
,
G. A.
Salvatore
,
C.
Zysset
,
T.
Kinkeldei
,
L.
Büthe
, and
G.
Tröster
,
IEEE Trans. Electron Devices
61
,
1085
(
2014
).
You do not currently have access to this content.