InSb epilayers and InSb/Al0.20In0.80Sb quantum wells (QWs) were grown on 4°-off-axis Ge-on-insulator (GeOI) substrates by molecular beam epitaxy. An initial AlSb nucleation was found to be important for achieving good crystalline quality. For a 4.0-μm-thick InSb epilayer and 25-nm-thick InSb QW, the room-temperature (RT) electron mobility was increased by 25% and 60% [58 000 cm2/(V-s) for the epilayer and 24 000 cm2/(V-s) for the QW], respectively, by using an off-axis GeOI substrate instead of an on-axis GeOI (001) substrate. This significant improvement may be attributed to the reduction of antiphase domains, microtwins, and threading dislocations. A modified QW structure on a 4°-off-axis GeOI substrate showed a further 25% improvement in RT electron mobility with a value 32 000 cm2/(V-s). This is the highest RT electron mobility in an InSb QW grown on a Ge-based substrate to date.

1.
T.
Ashley
 et al,
Electron. Lett.
43
,
777
(
2007
).
2.
E.
Michel
,
J.
Xu
,
J. D.
Kim
,
I.
Ferguson
, and
M.
Razeghi
,
IEEE Photon. Technol. Lett.
8
,
673
(
1996
).
3.
O. W.
Holland
,
C. W.
White
, and
D.
Fathy
,
Appl. Phys. Lett.
51
,
520
(
1987
).
4.
S.
Nakaharai
,
T.
Tezuka
,
N.
Sugiyama
,
Y.
Moriyama
, and
S.
Takagi
,
Appl. Phys. Lett.
83
,
3516
(
2003
).
5.
M. C.
Debnath
,
T.
Zhang
,
C.
Roberts
,
L. F.
Cohen
, and
R. A.
Stradling
,
J. Cryst. Growth
267
,
17
(
2004
).
6.
T. D.
Mishima
,
M.
Edirisooriya
, and
M. B.
Santos
,
Appl. Phys. Lett.
91
,
062106
(
2007
).
7.
K.
Kanisawa
,
H.
Yamaguchi
, and
Y.
Hirayama
,
Appl. Phys. Lett.
76
,
589
(
2000
).
8.
B. V.
Rao
,
D.
Gruznev
,
T.
Tambo
, and
C.
Tatsuyama
,
Semicond. Sci. Technol.
16
,
216
(
2001
).
9.
M.
Mori
,
D. M.
Li
,
M.
Yamazaki
,
T.
Tambo
,
H.
Ueba
, and
C.
Tatsuyama
,
Appl. Surf. Sci.
104/105
,
563
(
1996
).
10.
M. C.
Debnath
,
T. D.
Mishima
,
M. B.
Santos
,
K.
Hossain
, and
O. W.
Holland
,
J. Vac. Sci. Technol. B
27
,
2453
(
2009
).
11.
S.
Sun
,
Y.
Sun
,
Z.
Liu
,
D.
Lee
,
S.
Peterson
, and
P.
Pianetta
,
Appl. Phys. Lett.
88
,
021903
(
2006
).
12.
T.
Kawai
,
H.
Yonezu
,
H.
Yoshida
, and
K.
Pak
,
Appl. Phys. Lett.
61
,
1216
(
1992
).
13.
S. M.
Ting
and
E. A.
Fitzgerald
,
J. Appl. Phys.
87
,
2618
(
2000
).
14.
T. D.
Mishima
and
M. B.
Santos
,
J. Appl. Phys.
109
,
073707
(
2011
).
15.
M. C.
Debnath
,
T. D.
Mishima
,
M. B.
Santos
,
K.
Hossain
, and
O. W.
Holland
,
J. Appl. Phys.
111
,
073525
(
2012
).
16.
D.
Choi
,
J. S.
Harris
,
E.
Kim
,
P. C.
McIntyre
,
J.
Cagnon
, and
S.
Stemmer
,
J. Cryst. Growth
311
,
1962
(
2009
).
17.
L.
Dong
,
G.
Sun
,
J.
Yu
,
L.
Zheng
,
X.
Liu
,
F.
Zhang
,
G.
Yan
,
X.
Li
, and
Z.
Wang
,
Appl. Surf. Sci.
270
,
301
(
2013
).
18.
K.
Hossain
,
M. C.
Debnath
,
T. D.
Mishima
,
M. B.
Santos
, and
O. W.
Holland
,
ECS Trans.
50
,
437
(
2013
).
19.
T. D.
Mishima
,
M.
Edirisooriya
,
N.
Goel
, and
M. B.
Santos
,
Appl. Phys. Lett.
88
,
191908
(
2006
).
20.
M. C.
Debnath
,
T. D.
Mishima
,
M. B.
Santos
,
K.
Hossain
, and
O. W.
Holland
,
AIP Conf. Proc.
1416
,
146
(
2011
).
21.
C. C.
Shiue
and
C. T.
Sah
,
Surf. Sci.
58
,
153
(
1976
).
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