A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy postprocess removal of the mask without damage to the magnetic quality of the film. Co60Fe20B20 and Co/Ni multilayer films were patterned with electron beam lithography at 10–125 keV down to 25 nm wide features with 2 nm average root-mean square edge roughness. Both the in-plane and out-of-plane magnetic anisotropies of the respective film types were preserved after patterning.
Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires
Jean Anne Currivan, Saima Siddiqui, Sungmin Ahn, Larysa Tryputen, Geoffrey S. D. Beach, Marc A. Baldo, Caroline A. Ross; Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires. J. Vac. Sci. Technol. B 1 March 2014; 32 (2): 021601. https://doi.org/10.1116/1.4867753
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