Oxide-mediated direct bonding of InP to silicon has been investigated using a variety of oxidation and oxide-activation techniques to achieve void-free bonding without resorting to complex outgassing schemes. Void formation is shown to be related to the H content of the SiO2 layer. Transmission Fourier transformed infrared spectroscopy measurements corroborate this hypothesis. Finally, the use of ozone instead of oxygen plasma activation is also revealed to be beneficial for void-free bonding.
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