Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 × 8 nm2 cross point memristive devices using wet chemical etching and nanoimprint lithography. The devices exhibited nonvolatile bipolar switching with extreme low programming current of 600 pA. The devices also exhibited fast switching speed and improved uniformity and promising endurance and data retention. This work opens the opportunities for memristive devices in the next generation ultrahigh-density data storage and low-power high-speed unconventional computing.
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Research Article| October 28 2013
Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography
Shuang Pi, Peng Lin, Qiangfei Xia; Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography. J. Vac. Sci. Technol. B 1 November 2013; 31 (6): 06FA02. https://doi.org/10.1116/1.4827021
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