The pseudo-binary alloy of indium(x)gallium(1−x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1−xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.
REFERENCES
1.
R. R.
King
et al, Prog. Photovolt.: Res. Appl.
20
, 801
(2012
).2.
R. R.
King
, D. C.
Law
, K. M.
Edmondson
, C. M.
Fetzer
, G. S.
Kinsey
, H.
Yoon
, R. A.
Sherif
, and N. H.
Karam
, Appl. Phys. Lett.
90
, 183516
(2007
).3.
J. F.
Geisz
et al, Appl. Phys. Lett.
93
, 123505
(2008
).4.
P.
Chiu
, S.
Wojtczuk
, X.
Zhang
, C.
Harris
, D.
Pulver
, and M.
Timmons
, in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC)
, Seattle, WA, 2011
, pp. 000771
–000774
.5.
M.
Wiemer
, V.
Sabnis
, and H.
Yuen
, in Proceedings of SPIE High and Low Concentrator Systems for Solar Electric Applications VI
, San Diego, CA, 2011
, pp. 810804
.6.
J.
Wu
, W.
Walukiewicz
, K. M.
Yu
, J. W.
Ager
III, E. E.
Haller
, H.
Lu
, W. J.
Schaff
, Y.
Saito
, and Y.
Nanishi
, Appl. Phys. Lett.
80
, 3967
(2002
).7.
F. A.
Ponce
and D. P.
Bour
, Nature
386
, 351
(1997
).8.
J.
Phillip
et al, Laser Photon. Rev.
1
, 307
(2007
).9.
M.
Moseley
, J.
Lowder
, D.
Billingsley
, and W. A.
Doolittle
, Appl. Phys. Lett.
97
, 191902
(2010
).10.
W.
Walukiewicz
, R. E.
Jones
, S. X.
Li
, K. M.
Yu
, J. W.
Ager
III, E. E.
Haller
, H.
Lu
, and W. J.
Schaff
, J. Cryst. Growth
288
, 278
(2006
).11.
E.
Trybus
, G.
Nomkoong
, W.
Henderson
, S.
Burnham
, W. A.
Doolittle
, M.
Cheung
, and A.
Cartwright
, J. Cryst. Growth
288
, 218
(2006
).12.
K.
Ghosh
, C. J.
Tracy
, S.
Herasimenka
, C.
Honsberg
, and S.
Bowden
, in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
, Honolulu, HI, 2010
, pp. 001383
–001386
.13.
J.-R.
Chen
, C.-H.
Lee
, T.-S.
Ko
, Y.-A.
Chang
, T.-C.
Lu
, H.-C.
Kuo
, Y.-K.
Kuo
, and S.-C.
Wang
, J. Lightwave Technol.
26
, 329
(2008
).14.
K.
Ghosh
, S.
Bowden
, and C.
Tracy
, Phys. Status Solidi A
210
, 413
(2013
).15.
T. L.
Williamson
, A. L.
Salazar
, J. J.
Williams
, and M. A.
Hoffbauer
, Phys. Status Solidi C
8
, 2098
(2011
).16.
N.
Miller
, R. E.
Jones
, K. M.
Yu
, J. W.
Ager
, Z.
Liliental-Weber
, E. E.
Haller
, Walukiewicz
, T. L.
Williamson
, and M. A.
Hoffbauer
, Phys. Status Solidi C
5
, 1866
(2008
).17.
T. L.
Williamson
, J. J.
Williams
, J. C. D.
Hubbard
, and M. A.
Hoffbauer
, J. Vac. Sci. Tech. D
29
, 03C132
(2011
).18.
J. E.
Ayers
, Heteroepitaxy of Semiconductors: Theory, Growth and Characterization
(CRC
, New York
, 2007
), pp. 301
–312
.19.
J. E.
Ayers
, J. Cryst. Growth
135
, 71
(1994
).20.
N.
Faleev
, H.
Lu
, and W. J.
Schaff
, J. Appl. Phys.
101
, 093516
(2007
).21.
P. G.
Moses
and C. G.
Van de Walle
, Appl. Phys. Lett.
96
, 021908
(2010
).© 2013 American Vacuum Society.
2013
American Vacuum Society
You do not currently have access to this content.