Epitaxial NiInGaAs formed by solid state reaction on In_0.53Ga_0.47As: Structural and chemical study Available to Purchase

Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on $(100)$ In_0.53Ga_0.47As are used as metal source and drain regions for In_0.53Ga_0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni₂In_0.53Ga_0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of ${100}InGaAs||{100}NiInGaAs$⁠; $⟨011¯⟩InGaAs||[001]NiInGaAs$⁠. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.