A theoretical model for the MOSFET local oxide capacitance as a crucial parameter for the characterization of hot-carrier degradation has been developed. For this purpose, the conformal mapping technique is used. On the basis of the proposed approach a refined extraction scheme for the defect distribution from charge-pumping measurements has been employed. Assuming the extracted spatial trap distributions at different stress times as input, the transfer characteristics and linear drain current degradation are numerically calculated and compared with the experimental results. A very good agreement is achieved. These results demonstrate that the coordinate dependence of the oxide capacitance is extremely important for an accurate extraction of the defect profile particularly for large stress times. Additionally, the obtained results confirm the findings of our physics-based model of hot-carrier degradation.
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January 2013
Research Article|
January 09 2013
Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs
Ivan Starkov;
Ivan Starkov
a)
Institute for Microelectronics,
Vienna University of Technology
, Gußhausstraße 27-29, A-1040 Vienna, Austria
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Hubert Enichlmair
Hubert Enichlmair
Process Development and Implementation Department
, Austriamicrosystems AG, Tobelbader Straße 30, A-8141 Unterpremstaetten, Austria
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a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 31, 01A118 (2013)
Article history
Received:
August 13 2012
Accepted:
December 19 2012
Citation
Ivan Starkov, Hubert Enichlmair; Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs. J. Vac. Sci. Technol. B 1 January 2013; 31 (1): 01A118. https://doi.org/10.1116/1.4774106
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