In this work, the authors focus on the charge trapping behavior of Al2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during electrical stress. For this purpose, current–voltage, capacitance–voltage, and conductance–voltage characteristics of Al/Al2O3/p-Si capacitors are analyzed before and after constant voltage stress and several phenomena such as the generation of neutral traps in the bulk dielectric, slow states, interface states, and charge trapping related degradation during the electrical stress are investigated. Finally, the impact of the oxidant source on the Al2O3 layer reliability is discussed.
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January 2013
Research Article|
November 09 2012
Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant
Mireia Bargalló González;
Mireia Bargalló González
a)
Institut de Microelectrònica de Barcelona
, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
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Joan Marc Rafí;
Joan Marc Rafí
Institut de Microelectrònica de Barcelona
, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
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Oihane Beldarrain;
Oihane Beldarrain
Institut de Microelectrònica de Barcelona
, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
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Miguel Zabala;
Miguel Zabala
Institut de Microelectrònica de Barcelona
, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
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Francesca Campabadal
Francesca Campabadal
Institut de Microelectrònica de Barcelona
, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
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a)
Electronic mail: mireia.bargallo.gonzalez@csic.es
J. Vac. Sci. Technol. B 31, 01A101 (2013)
Article history
Received:
July 25 2012
Accepted:
October 08 2012
Citation
Mireia Bargalló González, Joan Marc Rafí, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal; Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant. J. Vac. Sci. Technol. B 1 January 2013; 31 (1): 01A101. https://doi.org/10.1116/1.4766182
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