The chemical mechanism of recently discovered high resolution laser dry development of methyl acetoxy calix(6)arene is probed. This process is an alternative to wet development and allows high aspect ratio patterns to be formed in resist without pattern collapse. Using infrared, Raman, and fluorescence spectroscopies, the authors have observed a reduction of the acetoxy groups, formation of hydroxyls and extended conjugation of the system due to the cross-linking under e-beam exposed film. These changes increase the laser absorption of the resist creating species that ablates under ambient conditions. Based on these studies, the authors surmise that chemical species formed during the e-beam exposure accelerate the ablation thus setting the basis for the selective ablation.

1.
T.
Tanaka
,
M.
Morigami
, and
N.
Atoda
,
Jpn. J. Appl. Phys., Part 1
32
,
6059
(
1993
).
2.
L. F.
Thomas
and
M. J.
Bowden
,
J. Electrochem. Soc.
120
,
1722
(
1973
).
3.
J. E.
Bjorkholm
,
L.
Eichner
,
J. C.
White
,
R. E.
Howard
, and
H. G.
Craighead
,
J. Appl. Phys.
58
,
2098
(
1985
).
4.
M. W.
Geis
,
J. N.
Randall
,
T. F.
Deutsch
,
P. D.
Degraff
,
K. E.
Krohn
, and
L. A.
Stern
,
Appl. Phys. Lett.
43
,
74
(
1983
).
5.
V.
Auzelyte
,
A.
Langner
, and
H. H.
Solak
,
J. Vac. Sci. Technol. B
27
,
2990
(
2009
).
6.
D. G.
de Oteyza
 et al,
Nanotechnology
23
,
185301
(
2012
).
7.
T.
Kozawa
,
S.
Nagahara
,
Y.
Yoshida
,
S.
Tagawa
,
T.
Watanabe
, and
Y.
Yamshita
,
J. Vac. Sci. Technol. B
15
,
2582
(
1997
).
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