The authors demonstrated a promising technique that yielded single-digit nanometer features for nanotechnology research and possible future electronic circuit fabrication by combining high resolution helium ion beam patterning and nanoimprint lithography. They fabricated a series of line patterns with single-digit nanometer half-pitches by exposing a layer of hydrogen silsesquioxane (HSQ) resist with a scanning focused helium ion beam. The smallest half-pitch of clearly resolved line patterns was 4 nm. Using the HSQ patterns as a nanoimprint template, nanoscale patterns down to 4 nm half-pitch were transferred into nanoimprint resist through a UV-curable nanoimprint process.

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