The effects of a heterojunction on the effective work function in a metal/high κ gate stack are studied and a new structure developed for the extraction of the work function. It is found that when a Ge/Si heterostructure on silicon is low doped and sufficiently thin, then the work function can be extracted in a manner similar to that on a simple silicon substrate. Modifications to the terraced oxide structure are proposed to remove oxidation effects of the alternate channel materials. The extracted work function of thickness variation of TiN is found to be in agreement with that of TiN on a silicon substrate.
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2012
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