A detailed study of the polarization dependences of the second‐harmonic generation process from clean Si(111)‐7×7 surfaces is presented and analyzed in terms of the symmetry properties of the surface. Results from real‐time, in situ measurements on disordering of the Si(111)‐7×7 surface by oxidation and Ar+ ion bombardment are also reported.

Topics
Measurement theory, Materials treatment, Second harmonic generation
This content is only available via PDF.
© 1985 American Vacuum Society.
1985
American Vacuum Society
You do not currently have access to this content.