We have studied Ga0.47In0.53Al/Al0.48In0.52As quantum wells grown by molecular beam epitaxy (MBE). The smoothing effect of a Ga0.47In0.53As buffer layer results in narrow linewidth. Strained layer superlattices of Ga0.85In0.15As/GaAs exhibit excitonic transition at 77 and 300 K as seen by absorption measurement. A model is proposed to explain the different energy transitions.

Topics
Superlattices, Epitaxy, Optical properties, Quantum wells
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© 1985 American Vacuum Society.
1985
American Vacuum Society
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