A new type of metal/semiconductor junction has been developed. Crystalline thin films of the intermetallic compound AuGa2 have been grown by molecular beam epitaxy (MBE) on GaSb(001) substrates with the orientation (001)AuGa2∥(001)GaSb, [100]AuGa2∥[100]GaSb. The resulting films have been characterized by Auger electron spectroscopy (AES), low energy electron diffraction, electron energy loss spectroscopy, scanning electron microscopy, x‐ray microprobe analysis, and Rutherford backscattering. The growth procedure is reported, and is discussed in terms of the Au–Ga binary phase diagram. This system is of special interest for contacting technology because the compounds terminate a pseudobinary cut through the Au–Ga–Sb bulk ternary phase diagram, which minimizes the amount of chemical interaction across the metal/semiconductor interface.

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