This paper presents the development of a new trench fabrication technique for silicon substrate utilizing undercutting and selective etching. The technique comprises (1) first aluminum film deposition and its etching with controlled undercut, (2) second aluminum film deposition, (3) second film liftoff, and (4) silicon substrate selective and anisotropic etching using the first and second films as etching masks. There are two predominant features of this technique. First, trench width is controlled by the first film undercutting. Second, highly selective and anisotropic etching of the silicon substrate is obtained employing the aluminum films as etching masks in configuration with planar plasma etching using CCl2F2 gas. Under optimum conditions, trenches of approximately 0.12 μm in width and 0.6 μm in depth are successfully fabricated.
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May 1985
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
May 01 1985
A new trench fabrication technique for silicon substrate utilizing undercutting and selective etching
Shiro Suyama;
Shiro Suyama
Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, 3‐9‐11 Midori‐cho, Musashino‐shi, Tokyo, 180 Japan
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Toshiaki Yachi;
Toshiaki Yachi
Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, 3‐9‐11 Midori‐cho, Musashino‐shi, Tokyo, 180 Japan
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Tadashi Serikawa
Tadashi Serikawa
Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, 3‐9‐11 Midori‐cho, Musashino‐shi, Tokyo, 180 Japan
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J. Vac. Sci. Technol. B 3, 905–908 (1985)
Article history
Received:
July 16 1984
Accepted:
December 03 1984
Citation
Shiro Suyama, Toshiaki Yachi, Tadashi Serikawa; A new trench fabrication technique for silicon substrate utilizing undercutting and selective etching. J. Vac. Sci. Technol. B 1 May 1985; 3 (3): 905–908. https://doi.org/10.1116/1.583079
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