A unique X‐Y stage has been developed for use in an electron‐beam lithography system. It is designed to accommodate wafer sizes up to 6 in. The stage uses conventional linear ways and ball bearings, but incorporates a unique capstan/swinging drive bar design to couple the servomotors to the X and Y stage elements. Major components of the stage are made from titanium to achieve maximum stiffness to weight ratio. The capstan drive gives very rigid coupling between the servomotor and the stage. This drive stiffness permits rapid and precise positioning of the stage by the servosystem. The rotary capstan uses a ferrofluidic seal, permitting the servomotors to be outside the vacuum chamber without requiring bellows seals. A prototype of the stage has extremely low vibration levels, and can slew at velocities up to 10 cm per s. It can step 2 mm and settle to 10 μm in 52 ms, and achieve submicron position accuracy in 70 ms. Maximum acceleration capability is 0.8 g. Stage position is sensed by a laser interferometer and associated pulse‐counting circuitry. A microprocessor reads the position counters every 0.5 ms. The motor drive currents are computed from feedbacks proportional to position error and observed velocity, and from feedforwards proportional to desired velocity and acceleration. Stiffness at low frequency is enhanced by feedback derived from the integral of position error. Low harmonic excitation of the system in which the stage resides is guaranteed by smoothly varying preprogrammed trajectories derived by triple integration of jerk (acceleration rate) commands. A powerful high‐level control strategy has been developed in which sequences of traversal time and traversal distance of contiguous segments are converted to appropriate jerk commands for smooth continuous motion. The strategy includes, as an integral part, constraints for maximum velocity and acceleration. Trajectory commands are interpreted by the same microprocessor which computes the servomotor currents. Desired position, velocity, and acceleration are updated by the microprocessor every 0.5 ms in accord with the sequence of jerk commands provided by the control computer, in synchronization with pattern generator operation.
Skip Nav Destination
,
,
,
,
,
Article navigation
January 1985
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
January 01 1985
High speed precision X‐Y stage
John Reeds;
John Reeds
Hughes Research Laboratories, Malibu, California 90265
Search for other works by this author on:
S. Hansen;
S. Hansen
Hughes Research Laboratories, Malibu, California 90265
Search for other works by this author on:
O. Otto;
O. Otto
Hughes Research Laboratories, Malibu, California 90265
Search for other works by this author on:
Allen M. Carroll;
Allen M. Carroll
Perkin–Elmer Corporation, Hayward, California 94545
Search for other works by this author on:
Donald J. McCarthy;
Donald J. McCarthy
Perkin–Elmer Corporation, Hayward, California 94545
Search for other works by this author on:
Jack Radley
Jack Radley
Perkin–Elmer Corporation, Hayward, California 94545
Search for other works by this author on:
John Reeds
S. Hansen
O. Otto
Allen M. Carroll
Donald J. McCarthy
Jack Radley
Hughes Research Laboratories, Malibu, California 90265
J. Vac. Sci. Technol. B 3, 112–116 (1985)
Article history
Received:
June 28 1984
Accepted:
September 06 1984
Connected Content
A correction has been published:
Erratum: High speed precision X‐Y stage [J. Vac. Sci. Technol. B 3, 112 (1985)]
Citation
John Reeds, S. Hansen, O. Otto, Allen M. Carroll, Donald J. McCarthy, Jack Radley; High speed precision X‐Y stage. J. Vac. Sci. Technol. B 1 January 1985; 3 (1): 112–116. https://doi.org/10.1116/1.583190
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.
Related Content
A Finite Element Study of Capstan Friction Test
AIP Conf. Proc. (June 2004)
Friction experiments with a capstan
Am. J. Phys. (January 1991)
Tension of a Soft Spring in Contact with a Cylinder
Phys. Teach. (December 2009)
Advances in high precision sample positioning stages for electron‐beam microfabrication and metrology
J. Vac. Sci. Technol. (November 1979)
Automatic speed limit of vehicles in accident prone zones
AIP Conf. Proc. (November 2023)