The authors have previously used two methods for nanoimprinting hydrogen silsesquioxane (HSQ) patterns. In the casting method, the HSQ pattern was replicated at a low imprinting pressure of less than 1 MPa, however, the imprinting produced an uneven residue. On the contrary, in the spin-coating method, an evenly distributed HSQ film was produced. However, the HSQ pattern required a high imprinting pressure of about 40 MPa. To achieve imprinting at a low pressure with the spin-coating method, we propose a new room temperature nanoimprinting method using spin-coated HSQ and a poly(dimethylsiloxane) mold. The authors used high boiling point solvent, with a boiling point of greater than 200 °C, in place of the previously used solvent that had a boiling point of 96 °C. This method produced an evenly coated film in the liquid-phase.
Room temperature nanoimprinting using spin-coated hydrogen silsesquioxane with high boiling point solvent
Yuji Kang, Makoto Okada, Shinya Omoto, Yuichi Haruyama, Kazuhiro Kanda, Shinji Matsui; Room temperature nanoimprinting using spin-coated hydrogen silsesquioxane with high boiling point solvent. J. Vac. Sci. Technol. B 1 November 2011; 29 (6): 06FC03. https://doi.org/10.1116/1.3653227
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