Room temperature nanoimprinting using spin-coated hydrogen silsesquioxane with high boiling point solvent

The authors have previously used two methods for nanoimprinting hydrogen silsesquioxane (HSQ) patterns. In the casting method, the HSQ pattern was replicated at a low imprinting pressure of less than 1 MPa, however, the imprinting produced an uneven residue. On the contrary, in the spin-coating method, an evenly distributed HSQ film was produced. However, the HSQ pattern required a high imprinting pressure of about 40 MPa. To achieve imprinting at a low pressure with the spin-coating method, we propose a new room temperature nanoimprinting method using spin-coated HSQ and a poly(dimethylsiloxane) mold. The authors used high boiling point solvent, with a boiling point of greater than 200 °C, in place of the previously used solvent that had a boiling point of 96 °C. This method produced an evenly coated film in the liquid-phase.