In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, the authors first describe the successful deposition of lanthanum monosulfide via pulsed laser deposition on Si and MgO substrates. These thin films have been characterized by x-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, ellipsometry, Raman spectroscopy, ultraviolet photoelectron spectroscopy, and Kelvin probe measurements. For both LaS/Si and LaS/MgO thin films, the effective work function of the submicron thick thin films was determined to be about 1 eV from field emission measurements using the scanning anode field emission microscopy technique. The physical reasons for these highly desirable low work function properties were explained using a patchwork field emission model of the emitting surface. In this model, nanocrystals of low work function materials having a 〈100〉 orientation perpendicular to the surface and outcropping it are surrounded by a matrix of amorphous materials with a higher work function. To date, LaS thin films have been used successfully as cold cathode emitters with measured emitted current densities as high as 50 A/cm2. Finally, we describe the successful growth of LaS thin films on InP substrates and, more recently, the production of LaS nanoballs and nanoclusters using pulsed laser ablation.
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November 2011
Research Article|
October 28 2011
Review Article: Rare-earth monosulfides as durable and efficient cold cathodesa) Available to Purchase
Marc Cahay;
Marc Cahay
b)
School of Electronic and Computing Systems, University of Cincinnati
, Cincinnati, Ohio 45221
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Punit Boolchand;
Punit Boolchand
School of Electronic and Computing Systems, University of Cincinnati
, Cincinnati, Ohio 45221
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Steven B. Fairchild;
Steven B. Fairchild
Air Force Research Laboratory, Materials and Manufacturing Directorate
, AFRL/RXPS, Wright-Patterson AFB, Ohio 45433
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Larry Grazulis;
Larry Grazulis
Air Force Research Laboratory, Materials and Manufacturing Directorate
, AFRL/RXPS, Wright-Patterson AFB, Ohio 45433
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Paul T. Murray;
Paul T. Murray
Research Institute, University of Dayton
, Dayton, Ohio 45469
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Tyson C. Back;
Tyson C. Back
Universal Technology Corporation
, 1270 N. Fairfield Rd, Dayton, Ohio 45432
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Vincent Semet;
Vincent Semet
Equipe Emission Electronique, LPMCN, University of Lyon 1
, Villeurbanne 69622, France
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Vu Thien Binh;
Vu Thien Binh
Equipe Emission Electronique, LPMCN, University of Lyon 1
, Villeurbanne 69622, France
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Xiaohua Wu;
Xiaohua Wu
Institute for Microstructural Sciences, National Research Council
, Ottawa, Ontario K1A OR6, Canada
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Daniel Poitras;
Daniel Poitras
Institute for Microstructural Sciences, National Research Council
, Ottawa, Ontario K1A OR6, Canada
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David J. Lockwood;
David J. Lockwood
Institute for Microstructural Sciences, National Research Council
, Ottawa, Ontario K1A OR6, Canada
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Fei Yu;
Fei Yu
School of Energy, Environmental, Biological, and Medical Engineering, University of Cincinnati
, Cincinnati, Ohio 45221
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Vikram Kuppa
Vikram Kuppa
School of Energy, Environmental, Biological, and Medical Engineering, University of Cincinnati
, Cincinnati, Ohio 45221
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Marc Cahay
b)
Punit Boolchand
Steven B. Fairchild
Larry Grazulis
Paul T. Murray
Tyson C. Back
Vincent Semet
Vu Thien Binh
Xiaohua Wu
Daniel Poitras
David J. Lockwood
Fei Yu
Vikram Kuppa
School of Electronic and Computing Systems, University of Cincinnati
, Cincinnati, Ohio 45221b)
Electronic mail: [email protected]
a)
This work is dedicated to the memory of Walter Friz.
J. Vac. Sci. Technol. B 29, 06F602 (2011)
Article history
Received:
June 24 2011
Accepted:
September 23 2011
Citation
Marc Cahay, Punit Boolchand, Steven B. Fairchild, Larry Grazulis, Paul T. Murray, Tyson C. Back, Vincent Semet, Vu Thien Binh, Xiaohua Wu, Daniel Poitras, David J. Lockwood, Fei Yu, Vikram Kuppa; Review Article: Rare-earth monosulfides as durable and efficient cold cathodes. J. Vac. Sci. Technol. B 1 November 2011; 29 (6): 06F602. https://doi.org/10.1116/1.3653275
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