In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that it is possible to use inductively coupled plasma etching systems in order to etch nanometric layers, despite the fact that these systems are designed for deep and fast etching. A stable process is developed for shallow etching of silicon nitride nanoholes. The influence of different plasma etching parameters on silicon nitride nanohole properties is analyzed. 30 nm deep nanoholes of approximately 30 nm diameter, near vertical sidewalls and a good control of the selectivity are achieved. The overall process provides a simple and reproducible approach based on shallow inductively coupled plasma etching to obtain high quality nanosized silicon nitride templates. A suitable process for organized arrays of 10 nm diameter silicon nanocrystals realized by electrochemical etching is shown.
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September 2011
Research Article|
August 29 2011
Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process
Asma Ayari-Kanoun;
Asma Ayari-Kanoun
a)
Centre de Recherche en Nanofabrication et en Nanocaractérisation (CRN2),
Université de Sherbrooke
, Sherbrooke, Québec, J1K 2R1, Canada
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Abdelatif Jaouad;
Abdelatif Jaouad
Centre de Recherche en Nanofabrication et en Nanocaractérisation (CRN2),
Université de Sherbrooke
, Sherbrooke, Québec, J1K 2R1, Canada
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Abdelkader Souifi;
Abdelkader Souifi
Institut des Nanotechnologies de Lyon (INL)
, UMR-CNRS 5270, INSA de Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
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Dominique Drouin;
Dominique Drouin
Centre de Recherche en Nanofabrication et en Nanocaractérisation (CRN2),
Université de Sherbrooke
, Sherbrooke, Québec, J1K 2R1, Canada
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Jacques Beauvais
Jacques Beauvais
Centre de Recherche en Nanofabrication et en Nanocaractérisation (CRN2),
Université de Sherbrooke
, Sherbrooke, Québec, J1K 2R1, Canada
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. B 29, 051802 (2011)
Article history
Received:
April 20 2011
Accepted:
July 26 2011
Citation
Asma Ayari-Kanoun, Abdelatif Jaouad, Abdelkader Souifi, Dominique Drouin, Jacques Beauvais; Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process. J. Vac. Sci. Technol. B 1 September 2011; 29 (5): 051802. https://doi.org/10.1116/1.3628593
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